Semiconductor‐nanocrystals‐based white light‐emitting diodes

Q Dai, CE Duty, MZ Hu - small, 2010‏ - Wiley Online Library
In response to the demands for energy and the concerns of global warming and climate
change, energy efficient and environmentally friendly solid‐state lighting, such as white light …

[HTML][HTML] Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy

P Dhingra, AJ Muhowski, BD Li, Y Sun… - Journal of Applied …, 2023‏ - pubs.aip.org
III-V lasers based on self-assembled quantum dots (QDs) have attracted widespread interest
due to their unique characteristics, including low threshold current density (J th), low …

Prediction of total antioxidant activity of Prunella L. species by automatic partial least square regression applied to 2-way liquid chromatographic UV spectral images

AK Aloglu, PB Harrington, S Sahin, C Demir - Talanta, 2016‏ - Elsevier
Four different data representations were evaluated for the determination of the total
antioxidant activities of four different Prunella L. species, which are Prunella vulgaris …

InAs/GaAs quantum dot intermixing induced by proton implantation

Y Ji, W Lu, G Chen, X Chen, Q Wang - Journal of applied physics, 2003‏ - pubs.aip.org
We have investigated the intermixing effect of multilayer self-assembled InAs/GaAs quantum
dots on photoluminescence (PL) spectra. Proton implantation combined with rapid thermal …

Group-III vacancy induced quantum dot interdiffusion

HS Djie, O Gunawan, DN Wang, BS Ooi… - Physical Review B …, 2006‏ - APS
The impact of group-III vacancy diffusion, generated during dielectric cap induced
intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs∕ …

Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide

L Fu, P Lever, HH Tan, C Jagadish, P Reece… - Applied Physics …, 2003‏ - pubs.aip.org
In this work, titanium dioxide (TiO 2) film was deposited onto the In 0.5 Ga 0.5 As/GaAs
quantum-dot structure by electron-beam evaporation to investigate its effect on interdiffusion …

A nanomembrane-based wavelength-tunable high-speed single-photon-emitting diode

J Zhang, F Ding, E Zallo, R Trotta, B Hofer, L Han… - Nano …, 2013‏ - ACS Publications
We demonstrate an all-electrically operated wavelength-tunable on demand single-photon
source for the first time. The device consists of a light-emitting diode in the form of a …

Nonequilibrium carrier dynamics in self-assembled quantum dots

M Geller - Applied Physics Reviews, 2019‏ - pubs.aip.org
Self-assembled quantum dots are still one of the best model systems for artificial atoms in a
solid-state environment, where the electronic states can be accessed by electrical and …

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

JM Ulloa, JM Llorens, B Alén, DF Reyes… - Applied Physics …, 2012‏ - pubs.aip.org
The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs)
can be greatly enhanced by rapid thermal annealing while preserving long radiative …