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Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
[HTML][HTML] Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has
garnered much attention recently as a promising channel material for next-generation high …
garnered much attention recently as a promising channel material for next-generation high …
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
Recent observation of high density polarization-induced two-dimensional electron gases in
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
Microwave and millimeter-wave GaN HEMTs: Impact of epitaxial structure on short-channel effects, electron trap**, and reliability
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
Nanometer-thick oxide semiconductor transistor with ultra-high drain current
High drive current is a critical performance parameter in semiconductor devices for high-
speed, low-power logic applications or high-efficiency, high-power, high-speed radio …
speed, low-power logic applications or high-efficiency, high-power, high-speed radio …
Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates
To enhance the electron mobility in quantum-well high-electron-mobility transistors (QW
HEMTs), we investigate the transport properties in AlN/GaN/AlN heterostructures on Al-polar …
HEMTs), we investigate the transport properties in AlN/GaN/AlN heterostructures on Al-polar …
2DEG-concentration-modulated high-power-density AlGaN/GaN RF HEMTs
H Zhang, H Wang, M Zhang, L Yang… - IEEE Electron …, 2024 - ieeexplore.ieee.org
Herein, by modulating 2DEG concentration (), a superior GaN RF HEMT with a high-Al-
content AlGaN barrier is reported for high power-density () X-band applications. Thanks to a …
content AlGaN barrier is reported for high power-density () X-band applications. Thanks to a …
High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure
Benefitting from regrown Ohmic contact with a contact ledge structure, high performance
millimeter-wave InAlN/GaN HEMT is fabricated to satisfy low voltage RF applications …
millimeter-wave InAlN/GaN HEMT is fabricated to satisfy low voltage RF applications …
High-performance AlN/GaN MISHEMTs on Si with in-situ SiN enhanced ohmic contacts for mobile mm-wave front-end applications
In this letter, we demonstrated an AlN/GaN metal-insulator-semiconductor high electron
mobility transistor (MISHEMT) on a Si substrate with in-situ SiN as gate dielectric with …
mobility transistor (MISHEMT) on a Si substrate with in-situ SiN as gate dielectric with …