Electrically driven terahertz radiation of 2DEG plasmons in AlGaN/GaN structures at 110 K temperature
We experimentally observed a terahertz (THz) radiation of electrically driven 2D electron gas
(2DEG) plasmons in AlGaN/AlN/GaN structures at T= 110 K. The grating with a period of 1.0 …
(2DEG) plasmons in AlGaN/AlN/GaN structures at T= 110 K. The grating with a period of 1.0 …
Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field
The authors report on the observation and study of terahertz radiation emission from
modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two …
modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two …
High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate
The n-type GaN epilayers with low electron density were developed on a native substrate
using the metalorganic vapour phase epitaxy method and investigated under pulsed electric …
using the metalorganic vapour phase epitaxy method and investigated under pulsed electric …
Terahertz emission upon the interband excitation of GaN layers
AO Zakhar'in, AV Bobylev, AV Andrianov - Semiconductors, 2012 - Springer
The experimental observation and study of terahertz photoluminescence upon the steady-
state interband excitation of epitaxial n-GaN (Si) layers are reported. The properties of the …
state interband excitation of epitaxial n-GaN (Si) layers are reported. The properties of the …
Terahertz photoluminescence in doped nanostructures with spatial separation of donors and acceptors
RB Adamov, GA Melentev, IV Sedova, SV Sorokin… - Journal of …, 2024 - Elsevier
Terahertz (THz) luminescence in doped nanostructures with GaAs/AlGaAs quantum wells is
studied under conditions of interband optical pum**. The study is carried out on …
studied under conditions of interband optical pum**. The study is carried out on …
Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature
Terahertz (THz) electroluminescence of shallow impurities in the AlGaN/GaN HEMT
structures grown either on sapphire or silicon carbide substrates were studied in this work …
structures grown either on sapphire or silicon carbide substrates were studied in this work …
Terahertz radiation due to random grating coupled surface plasmon polaritons
We report on terahertz (THz) radiation under electrical pum** from a degenerate
semiconductor possessing an electron accumulation layer. In InN, the random grating …
semiconductor possessing an electron accumulation layer. In InN, the random grating …
Optical and electrical properties of GaN: Si-based microstructures with a wide range of do** levels
VF Agekyan, EV Borisov, LE Vorobjev… - Physics of the Solid …, 2015 - Springer
The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown
on sapphire have been studied. The studies have been performed over a wide range of …
on sapphire have been studied. The studies have been performed over a wide range of …
Electrically-pumped THz emitters based on plasma waves excitation in III-nitride structures
V Janonis, D Pashnev, I Grigelionis… - … and Applications XI, 2020 - spiedigitallibrary.org
We report three approaches to development of electrically-pumped THz emitters based on III-
Nitride structures. The first approach entails the investigation of two-dimensional (2D) …
Nitride structures. The first approach entails the investigation of two-dimensional (2D) …
Plasmon phonon modes and optical resonances in n-GaN
GA Melentev, DY Yaichnikov… - Journal of Physics …, 2016 - iopscience.iop.org
We study theoretically and experimentally transverse and longitudinal electromagnetic
waves in n-GaN epitaxial layers. The studies are carried out on the epitaxial layers with …
waves in n-GaN epitaxial layers. The studies are carried out on the epitaxial layers with …