Top-down fabrication of shape-controlled, monodisperse nanoparticles for biomedical applications

X Fu, J Cai, X Zhang, WD Li, H Ge, Y Hu - Advanced drug delivery reviews, 2018 - Elsevier
Nanoparticles for biomedical applications are generally formed by bottom-up approaches
such as self-assembly, emulsification and precipitation. But these methods usually have …

Nanostructures and functional materials fabricated by interferometric lithography

D **a, Z Ku, SC Lee, SRJ Brueck - Advanced materials, 2011 - Wiley Online Library
Interferometric lithography (IL) is a powerful technique for the definition of large‐area,
nanometer‐scale, periodically patterned structures. Patterns are recorded in a light …

Identifying close-packed planes in complex crystal structures

PM Kelly, HP Ren, D Qiu, MX Zhang - Acta materialia, 2010 - Elsevier
It is often necessary to identify close-packed or nearly close-packed planes in a crystal. This
can be done by inspection in crystal structures where one atom occupies each lattice point …

[HTML][HTML] Techniques for epitaxial site-selective growth of quantum dots

LN McCabe, JMO Zide - Journal of Vacuum Science & Technology A, 2021 - pubs.aip.org
We present an overview of techniques used to pattern the epitaxial growth of quantum dots.
Subsequent growth, morphology, and optical characterization are also discussed. The …

Wafer-scale nanopatterning using fast-reconfigurable and actively-stabilized two-beam fiber-optic interference lithography

C Liang, T Qu, J Cai, Z Zhu, S Li, WD Li - Optics Express, 2018 - opg.optica.org
A fast-reconfigurable and actively-stabilized fiber-optic interference lithography system is
demonstrated in this paper. Employment of fiber-optic components greatly enhances the …

[HTML][HTML] The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots

M Shahzadeh, M Sabaeian - AIP Advances, 2014 - pubs.aip.org
The authors report on the impact of wetting layer thickness and quantum dot size on the
electronic and optical properties of dome-shaped InAs/GaAs quantum dots (QDs) with …

Self-assembled GaAs islands on Si by droplet epitaxy

C Somaschini, S Bietti, N Koguchi, F Montalenti… - Applied physics …, 2010 - pubs.aip.org
We presented an innovative fabrication technique for the self-assembly of GaAs islands on
Si substrates by droplet epitaxy. The islands show highly tunable density (from 10 7 to some …

Enhanced InAs nanopillar electrical transport by in-situ passivation

A Lin, JN Shapiro, AC Scofield, BL Liang… - Applied Physics …, 2013 - pubs.aip.org
We investigate the effects of in-situ passivation on the electrical transport of InAs nanopillars
(NPs) grown on InAs (111) B substrates via selective-area epitaxy. Before passivation, the …

Epitaxial growth of lateral quantum dot molecules

E Zallo, P Atkinson, L Wang, A Rastelli… - … status solidi (b), 2012 - Wiley Online Library
We present an overview and a comparison between three different methods of creating low
density lateral In (Ga) As quantum dot molecules (QDMs) embedded in a GaAs matrix. Each …

Single dot spectroscopy of site-controlled InAs quantum dots nucleated on GaAs nanopyramids

T Tran, A Muller, CK Shih, PS Wong… - Applied Physics …, 2007 - pubs.aip.org
Single InAs quantum dots, site-selectively grown by a patterning and regrowth technique,
were probed using high-resolution low-temperature microphotoluminescence spectroscopy …