We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

In this article the do** of the oxidic compound semiconductor ZnO is reviewed with special
emphasis on n-type do**. ZnO naturally exhibits n-type conductivity, which is used in the …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Halide perovskite solar cells are a recent ground-breaking development achieving power
conversion efficiencies exceeding 18%. This has become possible owing to the remarkable …

Using first-principles electronic structure calculations we identify the anion vacancies in II-VI
and chalcopyrite Cu-III-VI 2 semiconductors as a class of intrinsic defects that can exhibit …

We summarize the progress made recently in understanding the electronic structure of
chalcopyrites. New insights into the dispersion of valence and conduction band allow …

The source of n-type conductivity in undoped transparent conducting oxides has been a
topic of debate for several decades. The point defect of most interest in this respect is the …

Recent advances in analytical and computational modelling frameworks to describe the
mechanics of materials on scales ranging from the atomistic, through the microstructure or …

We show through band structure calculations that III-V-Bi alloys, emerging as a new class of
semiconductor materials, differ nontrivially from their counterparts III-VN alloys which have …

The electronic defects in any semiconductor play a decisive role for the usability of this
material in an optoelectronic device. Electronic defects determine the do** level as well as …