The on-chip avalanche photodiodes (APDs) are crucial component of a fully integrated
photonics system. Specifically, III–V compound APD has become one of the main …

We constructed a model for a 3-stage InGaAs/InAlAs avalanche photodiode using numerical
simulations based on the gain-noise mechanism. The contact layer, barrier layer, charge …

An avalanche photodiode (APD) is a widely used device, especially in weak light detection
systems like fiber optic detection. InAlAs is suitable for the fabrication of multiplication and …

Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche
photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field …

Digital alloy (DA) InAlAs on the InP substrate exhibits a lower excess noise compared to a
traditional In 0.52 Al 0.48 As random alloy as the multiplication layer in avalanche …

We report the behaviour of the dark current and gain characteristics of Si-and GaN-based
avalanche photodiodes (APDs) irradiated by fast neutrons. For Si-based APDs, the dark …

Photon and dark avalanche signals of InGaAs single-photon avalanche diodes (SPAD) are
detected and counted indiscriminately, while their specific characteristics are not well …

In this work, the InGaAs/InAlAs multi-gain-stage APD model is established. The gain and the
noise performance of multi-gain-stage APDs are analyzed based on DSMT. By studying the …

Suppression pre-breakdown in planar separated absorption, grading, charge and
multiplication (SAGCM) avalanche photodiodes (APDs) with the help of Floating Guard Ring …

In this paper, the InGaAs/InP separate absorption, grading, charge, and multiplication
avalanche photodiode (SAGCM-APD) with a heterojunction multiplication layer and a hybrid …