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1T-1C dynamic random access memory status, challenges, and prospects
A Spessot, H Oh - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the status, the challenges, and the perspective of 1T-1C dynamic
random access memory (DRAM) chip. The basic principles of the DRAM are presented …
random access memory (DRAM) chip. The basic principles of the DRAM are presented …
Growth, dielectric properties, and memory device applications of ZrO2 thin films
D Panda, TY Tseng - Thin Solid Films, 2013 - Elsevier
In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …
was used as an outstanding dielectric and has dominated the microelectronics industry for …
Future of dynamic random-access memory as main memory
SK Kim, M Popovici - MRS Bulletin, 2018 - cambridge.org
Dynamic random-access memory (DRAM) is the main memory in most current computers.
The excellent scalability of DRAM has significantly contributed to the development of …
The excellent scalability of DRAM has significantly contributed to the development of …
Titanium bipolar plates augmented by nanocrystalline TiZrHfMoW coatings for application in proton exchange membrane fuel cells
A TiZrHfMoW refractory high entropy alloy (RHEA) nanocrystalline coating was engineered
onto a commercially pure Ti (CP-Ti) substrate to enhance its corrosion resistance for …
onto a commercially pure Ti (CP-Ti) substrate to enhance its corrosion resistance for …
Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films
High-permittivity (k) ZrO 2/Si (100) films were fabricated by a sol-gel technique and the
microstructural evolution with the annealing temperature (T a) was correlated with the …
microstructural evolution with the annealing temperature (T a) was correlated with the …
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications
Atomic layer deposition (ALD) has been established as a powerful method for the growth of
very thin and conformal films to be used in ultra-scaled conventional and novel …
very thin and conformal films to be used in ultra-scaled conventional and novel …
The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition
We compared the electrical properties of HfO 2, HfO 2/La 2 O 3, and La-doped HfO 2 gate
insulators deposited on Ge substrate using an atomic layer deposition (ALD) process …
insulators deposited on Ge substrate using an atomic layer deposition (ALD) process …
Advanced CMOS gate stack: Present research progress
The decreasing sizes in complementary metal oxide semiconductor (CMOS) transistor
technology require the replacement of SiO2 with gate dielectrics that have a high dielectric …
technology require the replacement of SiO2 with gate dielectrics that have a high dielectric …
Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in Interfacial Layer Formed by In Situ Desorption
CC Li, KS Chang-Liao, LJ Liu, TM Lee… - IEEE electron device …, 2014 - ieeexplore.ieee.org
Ge MOS devices with about 95% Ge 4+ in HfGeO x interfacial layer are obtained by H 2 O
plasma process together with in situ desorption before atomic layer deposition (ALD). The …
plasma process together with in situ desorption before atomic layer deposition (ALD). The …
Stabilized formation of tetragonal ZrO2 thin film with high permittivity
K Kato, T Saito, S Shibayama, M Sakashita… - Thin Solid Films, 2014 - Elsevier
We have investigated the effect of the film thickness and lattice spacing of Zr oxides on the
crystalline structures of Zr oxide films formed by atomic layer deposition (ALD) and …
crystalline structures of Zr oxide films formed by atomic layer deposition (ALD) and …