Review on spintronics: Principles and device applications
A Hirohata, K Yamada, Y Nakatani, IL Prejbeanu… - Journal of Magnetism …, 2020 - Elsevier
Spintronics is one of the emerging fields for the next-generation nanoelectronic devices to
reduce their power consumption and to increase their memory and processing capabilities …
reduce their power consumption and to increase their memory and processing capabilities …
Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in develo** voltage-torque MRAM
The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions
Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
Spintronic reservoir computing without driving current or magnetic field
Recent studies have shown that nonlinear magnetization dynamics excited in
nanostructured ferromagnets are applicable to brain-inspired computing such as physical …
nanostructured ferromagnets are applicable to brain-inspired computing such as physical …
Brownian motion of skyrmion bubbles and its control by voltage applications
Magnetic skyrmions are expected to be promising candidates for information carriers in
spintronic devices. In previous work, precise position control of skyrmions has been the main …
spintronic devices. In previous work, precise position control of skyrmions has been the main …
Determination of spin Hall angle, spin mixing conductance, and spin diffusion length in CoFeB/Ir for spin-orbitronic devices
Iridium is a very promising material for spintronic applications due to its interesting magnetic
properties such as large Ruderman-Kittel-Kasuya-Yosida exchange coupling as well as its …
properties such as large Ruderman-Kittel-Kasuya-Yosida exchange coupling as well as its …
A recent progress of spintronics devices for integrated circuit applications
T Endoh, H Honjo - Journal of Low Power Electronics and Applications, 2018 - mdpi.com
Nonvolatile (NV) memory is a key element for future high-performance and low-power
microelectronics. Among the proposed NV memories, spintronics-based ones are …
microelectronics. Among the proposed NV memories, spintronics-based ones are …
Giant converse magnetoelectric effect in a multiferroic heterostructure with polycrystalline Co2FeSi
To overcome a bottleneck in spintronic applications such as those of ultralow-power
magnetoresistive random-access memory devices, the electric-field control of magnetization …
magnetoresistive random-access memory devices, the electric-field control of magnetization …
Understanding voltage-controlled magnetic anisotropy effect at Co/oxide interface
The voltage-controlled magnetic anisotropy (VCMA) effect is a key to realising high-speed,
ultralow-power consumption spintronic devices. The fcc-Co-(111)-based stack is a …
ultralow-power consumption spintronic devices. The fcc-Co-(111)-based stack is a …
[HTML][HTML] Voltage-controlled magnetic anisotropy in an ultrathin Ir-doped Fe layer with a CoFe termination layer
We investigated the voltage-controlled magnetic anisotropy (VCMA) in an ultrathin Ir-doped
Fe layer with a Co x Fe 1− x termination layer. The VCMA effect depends on the …
Fe layer with a Co x Fe 1− x termination layer. The VCMA effect depends on the …