[PDF][PDF] An Improved nanoscale quasi-ballistic Double Gate (DG) MOSFET model with drain bias dependency on critical channel length near the low field source region …
V Murnal, C Vijaya - Indian Journal of Microelectronics, 2021 - ictactjournals.in
This work presents a physically accurate drain current model valid for Double Gate
MOSFETs in the nanoscale regime. The model incorporates both diffusive and ballistic …
MOSFETs in the nanoscale regime. The model incorporates both diffusive and ballistic …
An optimized nanoscale Quasi-Ballistic DG MOSFET model with diffusive carrier scattering dependency
VR Murnal - International Journal of Electronics, 2023 - Taylor & Francis
The work proposes a physically accurate quasi-ballistic drain current model valid for Double
Gate (DG) MOSFETs in the nanoscale regime. The proposed quasi-ballistic model considers …
Gate (DG) MOSFETs in the nanoscale regime. The proposed quasi-ballistic model considers …
Methodology of teaching and learning for micro-and nano-electronics during the COVID-19 pandemic using online educational tools
VM Moorthy, VM Srivastava - 2022 IEEE IFEES World …, 2022 - ieeexplore.ieee.org
Worldwide students are having their education disrupted by the 2019 coronavirus disease
(COVID-19) pandemic. Due to this, numerous contact courses have recently been moved to …
(COVID-19) pandemic. Due to this, numerous contact courses have recently been moved to …
[LIBRO][B] Elastomers for Stretchable Electronics: From Molecular Structure to Mechanical Properties
Y Yin - 2020 - search.proquest.com
Elastomers that can sustain large reversible strain are essential components for stretchable
electronics. In order to improve the stretchability and mechanical robustness of the …
electronics. In order to improve the stretchability and mechanical robustness of the …
A Comparative Analysis of Drain Current in Nanoscale MOSFET variants valid for Low Power Digital Applications
L Naik, N Umrani, M Mandi… - … Conference on Integrated …, 2024 - ieeexplore.ieee.org
Conventional bulk MOSFETs suffer from various short channel effects in the nanoscale
regime. An SOI (Silicon-on-Insulator) MOSFET and DG (Double-Gate) MOSFET are the …
regime. An SOI (Silicon-on-Insulator) MOSFET and DG (Double-Gate) MOSFET are the …
Feasibility Study of Non-volatile Memory Device Structure for Nanometer MOSFET
JY Jeong - Journal of the Semiconductor & Display Technology, 2015 - koreascience.kr
From 20nm technology node, the finFET has become standard device for ULSI's. However,
the finFET process made stacking gate non-volatile memory obsolete. Some reported …
the finFET process made stacking gate non-volatile memory obsolete. Some reported …
[PDF][PDF] COMPARATIVE ANALYSIS OF DIVERSE CARRIER TRANSPORTS IN MULTIGATE MOSFETS UNDER DIFFERENT CHANNEL LENGTH REGIMES
VR Murnal - changes - ictactjournals.in
Multi-gate MOSFETs have successfully enabled the extension of CMOS technology scaling
in the nanoscale regime. Suppression of short channel effects (SCEs) and carrier transport …
in the nanoscale regime. Suppression of short channel effects (SCEs) and carrier transport …
[PDF][PDF] МДН-транзистор з субмікрометровою довжиною каналу
ІВ Єрьоменко - 2021 - ela.kpi.ua
РЕФЕРАТ Роботу викладено на 53 сторінках, вона містить 5 розділів, 28 ілюстрацій, 1
таблицю та 24 джерела в переліку посилань. Об'єктом дослідження є МДН транзистор …
таблицю та 24 джерела в переліку посилань. Об'єктом дослідження є МДН транзистор …