A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review

MA Alam, BK Mahajan, YP Chen, W Ahn… - … on Electron Devices, 2019 - ieeexplore.ieee.org
As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important
concern for device performance, output power density, run-time variability, and reliability of …

High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2

KKH Smithe, CD English, SV Suryavanshi, E Pop - Nano letters, 2018 - ACS Publications
Two-dimensional semiconductors such as monolayer MoS2 are of interest for future
applications including flexible electronics and end-of-roadmap technologies. Most research …

Self-heating effect in FDSOI transistors down to cryogenic operation at 4.2 K

K Triantopoulos, M Cassé, S Barraud… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Self-heating in fully depleted silicon-oninsulator (FDSOI) metal-oxide-semiconductor field-
effect transistors (MOSFETs) is experimentally studied using the gate resistance …

Localized Heating and Switching in MoTe2-Based Resistive Memory Devices

IM Datye, MM Rojo, E Yalon, S Deshmukh… - Nano …, 2020 - ACS Publications
Two-dimensional (2D) materials have recently been incorporated into resistive memory
devices because of their atomically thin nature, but their switching mechanism is not yet well …

[HTML][HTML] Thermal boundary conductance of two-dimensional MoS2 interfaces

SV Suryavanshi, AJ Gabourie… - Journal of Applied …, 2019 - pubs.aip.org
Understanding the thermal properties of two-dimensional (2D) materials and devices is
essential for thermal management of 2D applications. Here, we perform molecular dynamics …

Impact of self-heating effect on transistor characterization and reliability issues in sub-10 nm technology nodes

Y Zhao, Y Qu - IEEE Journal of the Electron Devices Society, 2019 - ieeexplore.ieee.org
FinFET and fully depleted silicon-on-insulator (FDSOI) structures could further improve
transistor's performance and, however, also introduce some new problems, especially the …

Impact of geometry, do**, temperature, and boundary conductivity on thermal characteristics of 14-nm bulk and SOI FinFETs

J Sun, X Li, Y Sun, Y Shi - IEEE Transactions on Device and …, 2020 - ieeexplore.ieee.org
In this paper, the self-heating effect (SHE) in 14-nm bulk and SOI FinFETs are investigated
through the TCAD simulation. To achieve high authoritative evidences, the calibration is …

[BOOK][B] Low temperature characterization and modeling of FDSOI transistors for cryo CMOS applications

M Cassé, G Ghibaudo, SN Kazi - 2022 - books.google.com
The wide range of cryogenic applications, such as spatial, high performance computing or
high-energy physics, has boosted the investigation of CMOS technology performance down …

Investigation of trap density effect in gate-all-around field effect transistors using the finite element method

M Belkhiria, F Aouaini, S A. Aldaghfag, F Echouchene… - Electronics, 2023 - mdpi.com
Trap density refers to the density of electronic trap states within dielectric materials that can
capture and release charge carriers (electrons or holes) in a semiconductor channel …

Experimental investigations of state-of-the-art 650-V class power MOSFETs for cryogenic power conversion at 77K

Y Chen, XY Chen, T Li, YJ Feng, Y Liu… - IEEE Journal of the …, 2017 - ieeexplore.ieee.org
With consideration of both the operating properties from cryogenic MOSFETs and
refrigerating costs from cryogenic refrigerators, this paper attempts to carry out the …