In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …

This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown
on Si substrates. The whole device structures were grown by an industry standard chemical …

A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …

Recent development of group-IV alloy GeSn indicates its bright future for the application of
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …

Material and optical characterizations have been conducted for epitaxially grown Ge 1− x Sn
x thin films on Si with Sn composition up to 10%. A direct bandgap Ge 0.9 Sn 0.1 alloy has …

Despite the rapidly increasing efficiencies of perovskite solar cells, the optoelectronic
properties of this material class are not completely understood. Especially when measured …

The recent demonstration of the GeSn laser opened a promising route towards the
monolithic integration of light sources on the Si platform. A GeSn laser with higher Sn …

Recently, lead-free double perovskites of Cs2AgBiBr6 have attracted worldwide attention as
a promising candidate for eco-friendly photovoltaics because of their intrinsic environmental …

Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition
up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge …