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Transistors based on two-dimensional materials for future integrated circuits
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable
semiconducting materials known. Their unique optical, electronic and mechanical properties …
semiconducting materials known. Their unique optical, electronic and mechanical properties …
[HTML][HTML] Towards oxide electronics: a roadmap
At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …
experiencing a constant and breathtaking increase of device speed and density, Moore's …
CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory
Ferroelectric memory has been substantially researched for several decades as its potential
to obtain higher speed, lower power consumption, and longer endurance compared to …
to obtain higher speed, lower power consumption, and longer endurance compared to …
Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors
Transition‐metal dichalcogenides (TMDCs) are an important class of two‐dimensional (2D)
layered materials for electronic and optoelectronic applications, due to their ultimate body …
layered materials for electronic and optoelectronic applications, due to their ultimate body …
High-K materials and metal gates for CMOS applications
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
[หนังสือ][B] An introduction to graphene plasmonics
PAD Gonçalves, NMR Peres - 2016 - books.google.com
This book is meant as an introduction to graphene plasmonics and aims at the advanced
undergraduate and graduate students entering the field of plasmonics in graphene. In it …
undergraduate and graduate students entering the field of plasmonics in graphene. In it …
Dam** pathways of mid-infrared plasmons in graphene nanostructures
Plasmon is the quantum of the collective oscillation of electrons. How plasmon loses its
energy (or dam**) plays a pivotal role in plasmonic science and technology. Graphene …
energy (or dam**) plays a pivotal role in plasmonic science and technology. Graphene …
Considerations for ultimate CMOS scaling
KJ Kuhn - IEEE transactions on Electron Devices, 2012 - ieeexplore.ieee.org
This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
Charge scattering and mobility in atomically thin semiconductors
The electron transport properties of atomically thin semiconductors such as MoS 2 have
attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms …
attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms …