Transistors based on two-dimensional materials for future integrated circuits

S Das, A Sebastian, E Pop, CJ McClellan… - Nature …, 2021 - nature.com
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

SL Li, K Tsukagoshi, E Orgiu, P Samorì - Chemical Society Reviews, 2016 - pubs.rsc.org
Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable
semiconducting materials known. Their unique optical, electronic and mechanical properties …

[HTML][HTML] Towards oxide electronics: a roadmap

M Coll, J Fontcuberta, M Althammer, M Bibes… - Applied surface …, 2019 - Elsevier
At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory

MK Kim, IJ Kim, JS Lee - Science advances, 2021 - science.org
Ferroelectric memory has been substantially researched for several decades as its potential
to obtain higher speed, lower power consumption, and longer endurance compared to …

Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors

Z Yu, ZY Ong, S Li, JB Xu, G Zhang… - Advanced Functional …, 2017 - Wiley Online Library
Transition‐metal dichalcogenides (TMDCs) are an important class of two‐dimensional (2D)
layered materials for electronic and optoelectronic applications, due to their ultimate body …

High-K materials and metal gates for CMOS applications

J Robertson, RM Wallace - Materials Science and Engineering: R: Reports, 2015 - Elsevier
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

[หนังสือ][B] An introduction to graphene plasmonics

PAD Gonçalves, NMR Peres - 2016 - books.google.com
This book is meant as an introduction to graphene plasmonics and aims at the advanced
undergraduate and graduate students entering the field of plasmonics in graphene. In it …

Dam** pathways of mid-infrared plasmons in graphene nanostructures

H Yan, T Low, W Zhu, Y Wu, M Freitag, X Li… - Nature …, 2013 - nature.com
Plasmon is the quantum of the collective oscillation of electrons. How plasmon loses its
energy (or dam**) plays a pivotal role in plasmonic science and technology. Graphene …

Considerations for ultimate CMOS scaling

KJ Kuhn - IEEE transactions on Electron Devices, 2012 - ieeexplore.ieee.org
This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …

Charge scattering and mobility in atomically thin semiconductors

N Ma, D Jena - Physical Review X, 2014 - APS
The electron transport properties of atomically thin semiconductors such as MoS 2 have
attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms …