Threshold switches with Ag or Cu active metal species are volatile memristors (also termed
diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal …

Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …

A computing scheme that can solve complex tasks is necessary as the big data field
proliferates. Probabilistic computing (p-computing) paves the way to efficiently handle …

Cation‐based resistive switching (RS) devices, dominated by conductive filaments (CF)
formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory …

Lead-free halide perovskites are emerging as promising candidate for practical application
of optoelectronic devices due to their nontoxicity. Unfortunately, previously-reported lead …

Halide perovskites (HPs) can be the effective functional materials for the sneak‐path current
issue in the memristive crossbar array. Herein, an efficient strategy is proposed to integrate …

High‐performance selector devices are essential for emerging nonvolatile memories to
implement high‐density memory storage and large‐scale neuromorphic computing. Device …

Herein, a true random number generator (TRNG) based on a CuxTe1− x diffusive memristor
(DM) using its threshold switching (TS) behavior is reported. The intrinsic stochasticity of the …

The recent progress of selector and self‐rectifying devices for resistive random‐access
memory applications is reviewed. In particular, the performance of crossbar arrays based on …

The first report of a quantized conductance atomic threshold switch (QCATS) using an
atomically‐thin hexagonal boron nitride (hBN) layer is provided. This QCATS has …