2.1 Background There is already a wealth of information on the wet chemical cleaning of Si
for semiconductor processing,(14, 15) but there is less on subsequent modification methods …

The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace
FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in …

HfO 2 gate dielectric thin-films were deposited on Si wafers using an atomic-layer deposition
(ALD) technique with HfCl 4 and either H 2 O or O 3 as the precursor and oxidant …

We present a semi‐analytical model for the calculation of the current through and the
recombination in carrier‐selective junctions consisting of a poly‐Si/SiOx/c‐Si layer stack. We …

A capacitance model is developed and a correction formula is derived to reconstruct the
intrinsic oxide capacitance value from measured capacitance and conductance of lossy …

The origin of the anomalous frequency dispersion in accumulation capacitance of metal-
insulator-semiconductor devices on InGaAs and InP substrates is investigated using …

Metal oxide semiconductor capacitors were fabricated using p-type oxygen-terminated (001)
diamond and Al 2 O 3 deposited by atomic layer deposition at two different temperatures …

The interface trap density (D it) and bonding of the HfO 2/InP interface is investigated. The
energy distribution of interface states extracted using capacitance-voltage measurements …

The interface properties of Al 2 O 3/hydrogen-terminated diamond (H-diamond) metal-oxide-
semiconductor (MOS) structures both with and without NO 2 p-type do** were studied by …

The interface trap density (D it) and bonding at the Al 2 O 3/InP interface was investigated
using capacitance-voltage (CV) measurements and X-ray photoelectron spectroscopy …