Parallel multi-band k· p code for electronic structure of zinc blend semiconductor quantum dots
S Tomić, AG Sunderland, IJ Bush - Journal of Materials Chemistry, 2006 - pubs.rsc.org
We present a parallel implementation of the multi-bank k· p code () for calculation of the
electronic structure and optical properties of zinc blend structure semiconductor quantum …
electronic structure and optical properties of zinc blend structure semiconductor quantum …
Size and shape tunability of self-assembled InAs/GaAs nanostructures through the cap** rate
The practical realization of epitaxial quantum dot (QD) nanocrystals led before long to
impressive experimental advances in optoelectronic devices, as well as to the emergence of …
impressive experimental advances in optoelectronic devices, as well as to the emergence of …
InAs quantum dot morphology after cap** with In, N, Sb alloyed thin films
Using a thin cap** layer to engineer the structural and optical properties of InAs/GaAs
quantum dots (QDs) has become common practice in the last decade. Traditionally, the main …
quantum dots (QDs) has become common practice in the last decade. Traditionally, the main …
Direct measurement and analysis of the conduction band density of states in diluted alloys
We use scanning tunneling spectroscopy to show directly that the conduction band density
of states (DOS) of GaAs 1− x N x with low nitrogen (N) content x is enhanced about 0.5 eV …
of states (DOS) of GaAs 1− x N x with low nitrogen (N) content x is enhanced about 0.5 eV …
Influence of Sb/N contents during the cap** process on the morphology of InAs/GaAs quantum dots
Abstract InAs/GaAs QDs are being investigated in the field of solar cells (SCs) with the aim of
achieving high SC performances. In order to control the band offsets and the accumulated …
achieving high SC performances. In order to control the band offsets and the accumulated …
Broadband light sources based on InAs/InGaAs metamorphic quantum dots
We propose a design for a semiconductor structure emitting broadband light in the infrared,
based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In x Ga 1− x …
based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In x Ga 1− x …
Electronic structure of quantum dots by ten-band theory
S Tomić - Physical Review B—Condensed Matter and Materials …, 2006 - APS
We present a theoretical study of the electronic and optical properties of In Ga As N∕ Ga As
quantum dot structures. The calculations are based on a 10× 10 k∙ p band anticrossing …
quantum dot structures. The calculations are based on a 10× 10 k∙ p band anticrossing …
Cap** layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
Changing the growth rate during the heteroepitaxial cap** of InAs/GaAs quantum dots
(QDs) with a 5 nm-thick GaAsSbN cap** layer (CL) strongly modifies the QD structural and …
(QDs) with a 5 nm-thick GaAsSbN cap** layer (CL) strongly modifies the QD structural and …
Characteristics of gradient-interface-structured ZnCdSSe quantum dots with modified interface and its application to quantum-dot-sensitized solar cells
Colloidal quantum dots (QDs) are attractive materials for application in photovoltaics, LEDs,
displays, and bio devices owing to their unique properties. In this study, we synthesized …
displays, and bio devices owing to their unique properties. In this study, we synthesized …
Impact of alloyed cap** layers on the performance of InAs quantum dot solar cells
The impact of using thin GaAs (Sb)(N) cap** layers (CLs) on InAs/GaAs quantum dots
(QDs) is investigated for their application in solar cell devices. We demonstrate the ability to …
(QDs) is investigated for their application in solar cell devices. We demonstrate the ability to …