Luminescence properties of defects in GaN
Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …
have gained an unprecedented attention due to their wide-ranging applications …
Electronic surface and dielectric interface states on GaN and AlGaN
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …
devices; however, they are plagued by a high density of interface states that affect device …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
Carbon is a common impurity in the group-III nitrides, often unintentionally incorporated
during growth. Nevertheless, the properties of carbon impurities in the nitrides are still not …
during growth. Nevertheless, the properties of carbon impurities in the nitrides are still not …
[書籍][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Buffer design to minimize current collapse in GaN/AlGaN HFETs
The bulk trap-induced component of current collapse (CC) in GaN/AlGaN heterojunction
field-effect transistors is studied in drift diffusion simulations, distinguishing between …
field-effect transistors is studied in drift diffusion simulations, distinguishing between …
Trap** effects in GaN and SiC microwave FETs
SC Binari, PB Klein, TE Kazior - Proceedings of the IEEE, 2002 - ieeexplore.ieee.org
It is well known that trap** effects can limit the output power performance of microwave
field-effect transistors (FETs). This is particularly true for the wide bandgap devices. In this …
field-effect transistors (FETs). This is particularly true for the wide bandgap devices. In this …
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
DD Koleske, AE Wickenden, RL Henry… - Journal of crystal growth, 2002 - Elsevier
Impurity incorporation is studied as a function of metalorganic vapor phase epitaxy growth
conditions. The same GaN growth conditions were used initially, resulting in films with …
conditions. The same GaN growth conditions were used initially, resulting in films with …
AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low
E Bahat-Treidel, F Brunner, O Hilt, E Cho… - … on Electron Devices, 2010 - ieeexplore.ieee.org
A systematic study of GaN-based heterostructure field-effect transistors with an insulating
carbon-doped GaN back barrier for high-voltage operation is presented. The impact of …
carbon-doped GaN back barrier for high-voltage operation is presented. The impact of …
Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices
Vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors
grown on low-resistivity p-type (111) Si substrate are studied by temperature-dependent …
grown on low-resistivity p-type (111) Si substrate are studied by temperature-dependent …