In this work, high‐performance VO2 Mott memristors with the simple via‐hole structure of
Pt/VO2/Pt are fabricated on flexible Kapton polymide (PI) substrate with high endurance (> …

Based on Bruggeman's symmetric effective-medium formula and an explicit expression
derived for the temperature evolution of the volume fractions of the metallic and isolating …

We report that the thermally induced Mott transition in vanadium sesquioxide shows critical
slowing down and enhanced variance (“critical opalescence”) of the order parameter …

The effect of pressure on the electronic properties and crystal structure in a mixed spinel
ferrite Z n 0.2 M g 0.8 F e 2 O 4 was studied for the first time up to 48 GPa at room …

ABSTRACT A prototype of electric field-effect thermal transistor (EFETT) and the derived
thermal logic gates are proposed, using electric potentials as inputs and temperature as …

We report that close to a Mott transition there is an emergence of large thermal noise (S th)
which occurs concomitantly with large correlated flicker noise (1 f noise) with significant non …

We report an observation of phase coexistence near the metal-insulator transition (MIT) in a
film of NdNi O 3 grown on crystalline substrate LaAl O 3. This was established through a …

We present the model of an ultrasensitive mid-infrared (mid-IR) photodetector consisting of a
hybrid heterostructure made of nanopatterned graphene (NPG) and vanadium dioxide …

We show that an introduction of disorder in a controlled way using 1 MeV argon (Ar) ion
irradiation, suppresses the correlation driven metal-insulator transition (MIT) in Nd Ni O 3 …

A comprehensive understanding of the physical origins of the phase transition behaviors of
transition metal oxides is still complex due to the interplay among competing interactions of …