Electrical properties of (11-22) Si: AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy
In this work, the growth and conductivity of semipolar Al x Ga 1− x N: Si with (11-22)
orientation are investigated. Al x Ga 1− x N: Si (x= 0.60±0.03 and x= 0.80±0.02) layers were …
orientation are investigated. Al x Ga 1− x N: Si (x= 0.60±0.03 and x= 0.80±0.02) layers were …
AlGaN microfins as nonpolar UV emitters probed by time-resolved cathodoluminescence
Despite the continuous technological progress and recent commercialization of UV light
emitting diodes for sterilization and disinfection applications, the performance of solid-state …
emitting diodes for sterilization and disinfection applications, the performance of solid-state …
Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
C Trager-Cowan, A Alasmari, W Avis… - Semiconductor …, 2020 - iopscience.iop.org
The scanning electron microscopy techniques of electron backscatter diffraction (EBSD),
electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral …
electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral …
[HTML][HTML] Defect characterization of {101¯ 3} GaN by electron microscopy
Advances in obtaining untwinned (10 1 3)-oriented semi-polar GaN enable a new crystal
orientation for the growth of green and red LED structures. We present a scanning electron …
orientation for the growth of green and red LED structures. We present a scanning electron …
A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content
With a view to supporting the development of ultra-violet light-emitting diodes and related
devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga …
devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga …
Semiconductor UV photonics: feature introduction
X Li, RD Dupuis, T Wernicke - Photonics Research, 2019 - opg.optica.org
Semiconductor UV photonics research has emerged as one of the most heavily invested
areas among semiconductor photonics research due to numerous crucial applications such …
areas among semiconductor photonics research due to numerous crucial applications such …
Reduction of SEM charging artefacts in native cryogenic biological samples.
Scanning electron microscopy (SEM) of frozen-hydrated biological samples allows imaging
of subcellular structures at the mesoscale in their native state. Combined with focused ion …
of subcellular structures at the mesoscale in their native state. Combined with focused ion …
Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar GaN
J Bruckbauer, Y Gong, L Jiu, MJ Wallace… - Journal of Physics D …, 2020 - iopscience.iop.org
Influence of micro-patterning of the growth template on defect reduction and optical properties
of non-polar GaN - IOPscience This site uses cookies. By continuing to use this site you agree …
of non-polar GaN - IOPscience This site uses cookies. By continuing to use this site you agree …
OPTIMASI DSPE BERBASIS GRAPHENE OXIDE (GO) DARI LIMBAH KULIT SINGKONG DALAM PENENTUAN RESIDU ANTIBIOTIK CIPROFLOXACIN
I AHMAD - 2023 - digilib.unila.ac.id
Angka kasus penyakit infeksi yang cukup tinggi akan meningkatkan jumlah penggunaan
antibiotik. Antibiotik yang banyak digunakan salah satunya adalah ciprofloxacin …
antibiotik. Antibiotik yang banyak digunakan salah satunya adalah ciprofloxacin …
Characterisation of III-nitrides in the scanning electron microscope
A Alasmari - 2021 - stax.strath.ac.uk
This thesis presents research on the characterisation of group III-nitrides using scanning
electron microscope (SEM) techniques. In particular structural and morphological properties …
electron microscope (SEM) techniques. In particular structural and morphological properties …