Infrared optoelectronic sensing is the core of many critical applications such as night vision,
health and medication, military, space exploration, etc. Further including mechanical …

Nano/microstructures of compound semiconductors such as gallium arsenide (GaAs)
demonstrate enormous potential for advanced photonic technologies as they provide …

Monolithic integration of GaSb-based optoelectronic devices on Si is a promising approach
for achieving a low-cost, compact, and scalable infrared photonics platform. While …

Epitaxial growth of bulk InAs 1-x Sb x layer on GaAs substrate could open an opportunity for
cost-competitive long-wavelength infrared sensors. Achieving this requires a high-quality …

We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si
substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 μm …

Multispectral infrared imaging can acquire spectral information that is not attainable from
single band photodetectors. While emerging nanomaterials such as colloidal quantum dots …

Exploring innovative constituents in one-dimensional (1D) nanomaterials and integrating
them with two-dimensional (2D) van der Waals (vdW) materials are in high demand as a …

In order to realize advanced flexible devices, it is critical to simultaneously ensure the
flexibility and robustness of bonded joints in the electronic packages for the mechanical and …

Our study explores growth techniques and the electrical/optical behavior of InAs 0.7 Sb 0.3
compounds on GaAs substrates, utilizing various metamorphic buffer layers. The InAlSb …

This study investigates fabrication of transparent conductive glass using fluorine-doped tin
oxide (FTO) as a more affordable alternative to indium tin oxide (ITO) in photovoltaic …