Over the past 2 decades there has been tremendous advancements in the field of ultrafast
carrier dynamics in semiconductors. The driving force behind this movement other than the …

We review the use of optical spectroscopy for the study of hot carrier relaxation in
semiconductors. Results for direct-gap semiconductors, especially GaAs, and also recent …

The field of ultrafast spectroscopy of semiconductors and their nanostruc tures continues to
be an active field of research. Exciting new developments have taken place since the first …

The properties of hot electrons in systems where electrons and phonons experience
quantum confinement are reviewed. The modifications to the behaviour of electrons and …

The study of semiconductor heterostructures started more than forty years ago. In the 1980s
this area of research moved to the forefront of semiconduc tor physics, largely due to …

We present a systematic study of the cooling of hot carriers in undoped, n-type doped, and p-
type doped GaAs/Al x Ga 1− x As quantum wells of different well widths by time-resolved …

This paper reviews hot carrier effects in quasi-2-D polar semiconductors (quantum wells and
heterostructures), with special emphasis on the GaAs/AlGaAs system. After briefly …

The present paper illustrates a series of theoretical results on nonequilibrium phonon effects
based on a novel Monte Carlo algorithm. The details of the numerical procedure are given …

Hot electrons established by the absorption of high-energy photons typically thermalize on a
picosecond time scale in a semiconductor, dissipating energy via various phonon-mediated …

The carrier intraband relaxation in CdS is studied with femtosecond time resolution using the
luminescence up-conversion technique. The cooling dynamics of high-density carriers …