This paper summarizes some of the essential aspects of silicon‐nanowire growth and of
their electrical properties. In the first part, a brief description of the different growth …

Research on silicon nanowires has developed rapidly in recent years. This can best be
inferred from the sharply increasing number of publications in this field. In 2008, more than …

The potential for the metal nanocatalyst to contaminate vapour–liquid–solid grown
semiconductor nanowires has been a long-standing concern, because the most common …

The effect of surfaces on the optical properties of GaAs nanowires is evidenced by
comparing nanowires with or without an AlGaAs cap** shell as a function of the diameter …

Silicon nanowires of different widths were fabricated in silicon on insulator (SOI) material
using conventional process technology combined with electron-beam lithography. The aim …

Block copolymer patterned holey silicon (HS) was successfully integrated into a microdevice
for simultaneous measurements of Seebeck coefficient, electrical conductivity, and thermal …

We have studied the formation of ohmic contacts to InAs nanowires by chemical etching and
passivation of the contact areas in an ammonium polysulfide,(NH 4) 2 S x, water solution …

Direct electrical detection of biomolecules at high sensitivity has recently been demonstrated
using semiconductor nanowires. Here we demonstrate that semiconductor nanoribbons, in …

Fully CMOS compatible silicon-nanowire (SiNW) gate-all-around (GAA) n-and p-MOS
transistors are fabricated with nanowire channel in different crystal orientations and …

The electrical properties of Si nanowires covered by a SiO 2 shell are influenced by the
properties of the Si/SiO 2 interface. This interface can be characterized by the fixed oxide …