This article reviews the fundamental properties of InGaN materials. The growth kinetics
associated with the growth parameters, such as growth temperatures, V/III ratios, and growth …

III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …

Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been
calculated using numerical solutions of the effective mass Schrödinger equation. We have …

We have studied the low-temperature (T= 6 K) optical properties of a series of In Ga N∕ Ga
N single-quantum-well structures with varying indium fractions. With increasing indium …

Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …

Using time-resolved photoluminescence (PL) measurements, we present an experimental
verification for 100% internal quantum efficiency (IQE) of III-N quantum wells at low …

Group-III-nitride optical devices are conventionally important for displays and solid-state
lighting, and recently have garnered much interest in the field of visible-light communication …

The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the
external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other …

III-Nitrides are materials that have revolutionised the lighting industry allowing for the
development of high brightness and efficiency white light emitting diodes (LEDs), enabling …

The progress in the growth of nitride-based laser diodes (LDs) made by plasma-assisted
molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN …