The electric power supply system is one of the most important research areas within
sustainable and energy-efficient aviation for more-and especially all electric aircraft. This …

Abstract Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors
(MOSFETs) have gained significant attention due to their ability to achieve lower on …

The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–
semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at …

To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …

Accelerated terrestrial neutron irradiations were performed on different commercial SiC
power MOSFETs with planar, trench, and double-trench architectures. The results were used …

In this article, commercially 1200-V asymmetric and double trench silicon carbide (SiC)
metal-oxide-semiconductor-field-effect transistors (mosfets) from two manufacturers are …

In this article, the repetitive avalanche ruggedness of silicon carbide metal–oxide–
semiconductor field-effect transistors (MOSFETs) with asymmetric trench (AT) and double …

The suboptimal performance and low channel-carrier mobility of silicon carbide (SiC) power
MOSFETs are attributed to a high density of oxide traps near the 4H-SiC/SiO2 interface. In …

In this article, short-circuit capability prediction and failure mode of 1200-V-class SiC
MOSFETs with a double and asymmetric trench structure are proposed under single-pulse …

The withstand capability and threshold voltage (VTH) instability of 1.2-kV silicon carbide
(SiC) MOSFETs under repetitive short circuit (SC) tests are investigated. An SC test system …