Thermal Characterization of Ferroelectric Al1–xBxN for Nonvolatile Memory
Boron (B)-substituted wurtzite AlN (Al1–x B x N) is a recently discovered wurtzite ferroelectric
material that offers several advantages over ferroelectric Hf1–x Zr x O2 and PbZr1–x Ti x O3 …
material that offers several advantages over ferroelectric Hf1–x Zr x O2 and PbZr1–x Ti x O3 …
(Ultra) wide bandgap semiconductor heterostructures for electronics cooling
The evolution of power and radiofrequency electronics enters a new era with (ultra) wide
bandgap semiconductors such as GaN, SiC, and β-Ga 2 O 3, driving significant …
bandgap semiconductors such as GaN, SiC, and β-Ga 2 O 3, driving significant …
Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures
L Wang, Z Zhang, X Su, J Zhou, J Chen, Z Li… - Applied Surface …, 2025 - Elsevier
The temperature rise in GaN-on-SiC based high electron mobility transistors (HEMTs) is
firmly dependent on the thermal conductivity (k) of GaN epilayer and the interfacial thermal …
firmly dependent on the thermal conductivity (k) of GaN epilayer and the interfacial thermal …
Multi-Wavelength Laser-Based Transient Thermoreflectance for Channel-Temperature Monitoring of GaN HEMTs
Y Mao, H Zhang, Y Ma, H Wang… - IEEE Transactions on …, 2025 - ieeexplore.ieee.org
Simultaneous high-spatial and high-temporal resolution channel-temperature
characterization methods are in great demand but still lacking for GaN devices. In this work …
characterization methods are in great demand but still lacking for GaN devices. In this work …
Experimental observation of ballistic to diffusive transition in phonon thermal transport of AlN thin films
Ultrawide bandgap semiconductor aluminum nitride (AlN) possesses high thermal
conductivity in bulk form due to long phonon mean-free-paths, high group velocity, and long …
conductivity in bulk form due to long phonon mean-free-paths, high group velocity, and long …
Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors
Cooling is important for AlGaN/GaN high-electron mobility transistors (HEMTs) performance.
In this paper, the advantages and disadvantages of the cooling performance of three cooling …
In this paper, the advantages and disadvantages of the cooling performance of three cooling …
Experimental observation of ballistic to diffusive transition in AlN thin films
Bulk AlN possesses high thermal conductivity due to long phonon mean-free-paths, high
group velocity, and long lifetimes. However, the thermal transport scenario becomes very …
group velocity, and long lifetimes. However, the thermal transport scenario becomes very …
Thermophysical Property Measurement of GaN-on-AlN Wafers for Next-Generation RF Device Technologies
Gallium nitride (GaN) high electron mobility transistors (HEMTs) play a crucial role in
modern radio frequency (RF) power amplifiers. However, the performance and reliability of …
modern radio frequency (RF) power amplifiers. However, the performance and reliability of …