Atomically thin layered III–VI metal chalcogenides are an emerging class of 2D materials
that have attracted increasing attention in recent years due to their remarkable physical …

Green hydrogen is the most promising option and a two in one remedy that resolve the
problem of both energy crisis and environmental pollution. Wide band gap semiconductors …

Gallium monochalcogenides (GaX, where X represents Te, Se, or S) have attracted
significant attention in the development of 2D semiconductor materials owing to their specific …

Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear
optical coefficients, and uncommon interband optical selection rules, making it interesting for …

Abstract 2D III-VI semiconductors have emerged as promising materials for optoelectronic
devices due to their tunable bandgaps, efficient light absorption and high carrier mobility …

Abstract Centimeter-sized Te: GaSe (≤ 10 mass%) ingots have been grown by the vertical
Bridgman technique and studied to reveal the potentials for phase matching and frequency …

A GaSe crystal cut along the (001) crystallographic plane is investigated for the emission
and detection of high-frequency (ie up to∼ 20 THz) electric fields. To date, a comprehensive …

The paper reports the efficient terahertz generation using nonlinear optical rectification
process and comparative studies of optical, dielectric, and surface scattering properties of …

We demonstrate the possibility of broadband THz pulse generation in mixed GaSe 1− x S x
and GaSe 1− x Te x crystals. The ordinary and extraordinary refractive indices of the crystals …

With the development of high-power infrared lasers and optical devices based on GaSe,
more attention has been paid to its optical damage under laser irradiation. Understanding …