Color centers are widely used in quantum information, quantum sensing, micro-nano optics
and other relevant fields. In addition to the traditional ways that can generate color centers …

In the past decade, color centers in silicon carbide (SiC) have emerged as promising
platforms for various quantum information technologies. There are three main types of color …

Color centers in wide bandgap semiconductors are prominent candidates for solid-state
quantum technologies due to their attractive properties including optical interfacing, long …

Color centers in silicon carbide are relevant for applications in quantum technologies as
they can produce single photon sources or can be used as spin qubits and in quantum …

Solid‐state single‐photon sources in the infrared region are crucial for advancing quantum
technologies, in particular long‐distance fiber or on‐chip quantum communication, quantum …

The nitrogen-vacancy (NV) centers (NCV Si)− in 4H silicon carbide (SiC) constitute an
ensemble of spin S= 1 solid state qubits interacting with the surrounding 14 N and 29 Si …

Triangular cross-section silicon carbide (SiC) photonic devices have been studied as an
efficient and scalable route for integration of color centers into quantum hardware. In this …

Silicon carbide is among the leading quantum information material platforms due to the long
spin coherence and single-photon emitting properties of its color center defects. Applications …

Divacancy defect spins in silicon carbide (SiC) are one of the promising candidates for
quantum network and quantum information processing due to their attractive optical and …

Silicon carbide (SiC) is an indirect wide band gap semiconductor that is utilized in many
industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit …