Assessing the role of a semiconductor's anisotropic permittivity in hafnium disulfide monolayer field-effect transistors
2-D semiconductors show great promise to serve as channel materials in next-generation
field-effect transistors (FETs). The permittivity of many 2-D semiconductors is anisotropic …
field-effect transistors (FETs). The permittivity of many 2-D semiconductors is anisotropic …
Performance Analysis of Blue Phosphorene Dual Gate Nano FET (DG-NFET)
P Kushwaha, BP Pandey - … in Renewable Energy and its Control …, 2020 - ieeexplore.ieee.org
In this work, dual gate nano FET (DG-NFET) is studied and simulated to achieve better On
current (I ON) and reduce Off current (I OFF) of the FET at different oxide thickness (T OX) …
current (I ON) and reduce Off current (I OFF) of the FET at different oxide thickness (T OX) …
Effects of Gate Oxide Thickness and Its Dielectric Strength in WS2 Based TMDFET
P Singh, BP Pandey - International Journal of Energetic …, 2019 - materials.journalspub.info
This paper presents the numerical simulation of transition metal dichalcogenide based field
effect transistor (TMDFET). Here we have studied the transfer characteristic, ION/IOFF ratio …
effect transistor (TMDFET). Here we have studied the transfer characteristic, ION/IOFF ratio …
Theoretical study of single and dual gate MoS2 based TMDFET by varying oxide thickness and channel length
P Singh, BP Pandey - 2019 IEEE Students Conference on …, 2019 - ieeexplore.ieee.org
In this paper, we have performed the theoretical study of single and dual gate MoS 2 based
TMD Field Effect Transistor (TMDFET). The different performance characteristics of TMDFET …
TMD Field Effect Transistor (TMDFET). The different performance characteristics of TMDFET …