This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

In nanoscale systems coupled to finite-size reservoirs, the reservoir temperature may
fluctuate due to heat exchange between the system and the reservoirs. To date, a stochastic …

The impact of dopant atoms in transistor functionality has significantly changed over the past
few decades. In downscaled transistors, discrete dopants with uncontrolled positions and …

Donor‐atom‐based nano‐devices in silicon represent a breakthrough for individual control
of electrons at atomic scale. Here, a finite‐bias characterization of electrical transport …

Quantum dots formed by donor-atoms in Si nanodevices can provide a breakthrough for
functionality at the atomic level with one-by-one control of electrons. However, single …

Semiconductor devices have been scaled to the point that transport can be dominated by
only a single dopant atom. As a result, in a Si fin-type field effect transistor Kondo physics …

We report on the hole compact double quantum dots fabricated using a conventional CMOS
technology. We provide the evidence of Pauli spin blockade in the few hole regime that is …

Recent progresses in quantum dots technology allow fundamental studies of single donors
in various semiconductor nanostructures. For the prospect of applications figures of merits …

Abstract The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor
Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one …

We report the observation of an atomic like behavior from T= 4.2 K up to room temperature in
n-and p-type Ω-gate silicon nanowire (NW) transistors. For that purpose, we modified the …