Toward smart and ultra‐efficient solid‐state lighting

JY Tsao, MH Crawford, ME Coltrin… - Advanced Optical …, 2014 - Wiley Online Library
Solid‐state lighting has made tremendous progress this past decade, with the potential to
make much more progress over the coming decade. In this article, the current status of solid …

Growth and applications of group III-nitrides

O Ambacher - Journal of physics D: Applied physics, 1998 - iopscience.iop.org
Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

JJ Wierer Jr, JY Tsao, DS Sizov - Laser & Photonics Reviews, 2013 - Wiley Online Library
Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

SP DenBaars, D Feezell, K Kelchner, S Pimputkar… - Acta Materialia, 2013 - Elsevier
Light-emitting diodes (LEDs) fabricated from gallium nitride (GaN) have led to the realization
of high-efficiency white solid-state lighting. Currently, GaN white LEDs exhibit luminous …

[LIVRE][B] Physics of semiconductors

M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

LEDs for solid-state lighting: performance challenges and recent advances

MH Crawford - IEEE Journal of Selected Topics in Quantum …, 2009 - ieeexplore.ieee.org
Over the past decade, advances in LEDs have enabled the potential for wide-scale
replacement of traditional lighting with solid-state light sources. If LED performance targets …

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

X Zhao, B Tang, L Gong, J Bai, J **… - Applied Physics Letters, 2021 - pubs.aip.org
High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are
desirable for future high-resolution displays and lighting products. Here, we demonstrate …

Band gap and work function tailoring of SnO 2 for improved transparent conducting ability in photovoltaics

AM Ganose, DO Scanlon - Journal of Materials Chemistry C, 2016 - pubs.rsc.org
Transparent conducting oxides (TCOs) are an essential component in modern
optoelectronic devices, such as solar panels and touch screens. Their ability to combine …

Development of InGaN-based red LED grown on (0001) polar surface

JI Hwang, R Hashimoto, S Saito… - Applied Physics …, 2014 - iopscience.iop.org
We report on the optical properties of the InGaN-based red LED grown on a c-plane
sapphire substrate. Blue emission due to phase separation was successfully reduced in the …

Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes

T Mukai, M Yamada, S Nakamura - Japanese Journal of Applied …, 1999 - iopscience.iop.org
Highly efficient light-emitting diodes (LEDs) emitting ultraviolet (UV), blue, green, amber and
red light have been obtained through the use of InGaN active layers instead of GaN active …