Binary group III-nitride based heterostructures: band offsets and transport properties
In the last few years, there has been remarkable progress in the development of group III-
nitride based materials because of their potential application in fabricating various …
nitride based materials because of their potential application in fabricating various …
Low current driven bidirectional violet light emitting diode based on p-GaN/n-InN heterojunction
Z Yue, G **ang, J Zhang, X Zhang, C Song… - Journal of …, 2024 - Elsevier
The fabrication of a low current bidirectional driven violet p-GaN/n-InN heterojunction light-
emitting diode (LED) by the radio-frequency (RF) magnetron sputtering is reported in this …
emitting diode (LED) by the radio-frequency (RF) magnetron sputtering is reported in this …
Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure
InN epilayer has been grown by plasma-assisted molecular beam epitaxy on the AlN/n-Si
(111) substrate. The self-powered photodetection has been carried out with an infra-red (IR) …
(111) substrate. The self-powered photodetection has been carried out with an infra-red (IR) …
Indium nitride nanoparticles prepared by laser ablation in liquid
Indium nitride InN nanoparticles NPs suspension prepared by Nd: YAG laser ablation of
indium target submerged under ammonium hydroxide. The Scanning electron microscopy, X …
indium target submerged under ammonium hydroxide. The Scanning electron microscopy, X …
Characterization of InN nanoparticles prepared by laser as photodetector
Indium nitride (InN) nanoparticles (NPs) are a potentially important material for
optoelectronic and high speed electronic devices. Using 1064 nm Nd: YAG laser, InN NPs …
optoelectronic and high speed electronic devices. Using 1064 nm Nd: YAG laser, InN NPs …
Fabrication and properties of InN NPs/Si as a photodetector
Abstract Indium nitride InN nanoparticles NPs are synthesized by laser ablation of indium
target in ammonium hydroxide solution. The scanning electron microscope SEM, Fourier …
target in ammonium hydroxide solution. The scanning electron microscope SEM, Fourier …
Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy
We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer
and nano-wall network (NWN) templates deposited on c-sapphire by varying the film …
and nano-wall network (NWN) templates deposited on c-sapphire by varying the film …
Selective growth of ordered hexagonal InN nanorods
Well-ordered and vertically aligned InN nanorods with high aspect ratios are synthesized by
hydride vapor phase epitaxy (HVPE) using the selective area growth (SAG) approach. The …
hydride vapor phase epitaxy (HVPE) using the selective area growth (SAG) approach. The …
Growth temperature induced physical property variation of InN films grown on nitrided sapphire substrate by PAMBE
Y Zhao, H Wang, H Yang, G Wu, Q **g, F Gao, W Li… - Vacuum, 2015 - Elsevier
InN epilayers were deposited on nitrided sapphire substrates using plasma-assisted
molecular beam epitaxy (PAMBE) system. The physical properties of InN films under …
molecular beam epitaxy (PAMBE) system. The physical properties of InN films under …
Carrier‐transport studies of III‐nitride/Si3N4/Si isotype heterojunctions
Abstract GaN/Si3N4/n‐Si and InN/Si3N4/n‐Si heterojunctions (HJs) were fabricated using
plasma‐assisted molecular beam epitaxy for a comparison study. Single‐crystalline wurtzite …
plasma‐assisted molecular beam epitaxy for a comparison study. Single‐crystalline wurtzite …