Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

The demand for improved electronic and optoelectronic devices has fuelled the
development of epitaxial growth techniques for single-crystalline semiconductors. However …

Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal.
Nanowires enable the local integration of high-quality III-V material, but advanced devices …

Increasing demand for every faster information throughput is driving the emergence of
integrated photonic technology. The traditional silicon platform used for integrated …

The deployment of photonic integrated circuits (PICs) necessitates an integration platform
that is scalable, high-throughput, cost-effective, and power-efficient. Here we present a …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

Neural networks have proven effective for solving many difficult computational problems, yet
implementing complex neural networks in software is computationally expensive. To explore …

The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …