GaN-on-Si power switching transistors that use carbon-doped epitaxy are highly vulnerable
to dynamic R ON dispersion, leading to reduced switching efficiency. In this paper, we …

Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …

R ON degradation due to stress in GaN-based power devices is a critical issue that limits,
among other effects, long-term stable operation. Here, by means of 2-D device simulations …

Bulk traps in the high-resistivity buffer stack underneath the 2-dimensional electron gas
(2DEG), which can interact with the high vertical electric field at OFF state, impose a critical …

This letter reports an extensive analysis of the charge capture transients induced by OFF-
state bias in double heterostructure AlGaN/GaN MIS-high electron mobility transistor grown …

Temperature dependent pulsed and ramped substrate bias measurements are used to
develop a detailed understanding of the vertical carrier transport in the buffer layers in a …

Epitaxial AlGaN/GaN/AlGaN-on-Si high-electron mobility structures with and without carbon
do** have been studied. By considering the donor density required to suppress a 2D hole …

Effective interface engineering techniques in III‐nitride heterojunction power devices, aiming
at yielding high VTH stability in insulated‐gate devices and suppressed current collapse in …

Dynamic RON and ramped substrate bias measurements are used to demonstrate size-and
geometry-dependent dispersion in power transistors. This is due to a novel lateral transport …

Substrate ramps and stepped stress transient measurements are applied to study vertical
charge transport mechanisms in GaN-on-Si power HEMTs. By choosing appropriate bias …