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Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure
First-principles density functional theory (DFT) is employed to study the electronic structure
of oxygen and gallium vacancies in monoclinic bulk β-Ga2O3 crystals. Hybrid exchange …
of oxygen and gallium vacancies in monoclinic bulk β-Ga2O3 crystals. Hybrid exchange …
Effect of oxygen flow ratio on the performance of RF magnetron sputtered Sn-doped Ga2O3 films and ultraviolet photodetector
This work explored the properties of RF magnetron sputtered Sn-doped Ga 2 O 3 films
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …
Characterization of CdxTeyOz/CdS/ZnO Heterostructures Synthesized by the SILAR Method
CdxTeyOz/CdS/ZnO heterostructures were obtained by the SILAR method using ionic
electrolytes. A CdS film was formed as a buffer layer for better adhesion of the cadmium …
electrolytes. A CdS film was formed as a buffer layer for better adhesion of the cadmium …
Advanced synthesis and characterization of CdO/CdS/ZnO heterostructures for solar energy applications
This study introduces an innovative method for synthesizing Cadmium Oxide/Cadmium
Sulfide/Zinc Oxide heterostructures (CdO/CdS/ZnO), emphasizing their potential application …
Sulfide/Zinc Oxide heterostructures (CdO/CdS/ZnO), emphasizing their potential application …
Formation of oxide crystallites on the porous GaAs surface by electrochemical deposition
We demonstrate how the formation of octahedral microcrystals of arsenic oxide As2O3 in the
form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical …
form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical …
[HTML][HTML] Study of β-Ga2O3 Ceramics Synthesized under Powerful Electron Beam
The synthesis of β-Ga2O3 ceramic was achieved using high-energy electron beams for the
first time. The irradiation of gallium oxide powder in a copper crucible using a 1.4 MeV …
first time. The irradiation of gallium oxide powder in a copper crucible using a 1.4 MeV …
Formation of porous Ga2O3/GaAs layers for electronic devices
The article presents a simple and cheap method to form a porous structure of Ga 2 O 3/GaAs
on the surface of monocrystalline gallium arsenide. It is shown that two-stage etching in the …
on the surface of monocrystalline gallium arsenide. It is shown that two-stage etching in the …
Layer-by-Layer Synthesis and Analysis of the the Phase Composition of Cdx TeyOz/CdS/por-ZnO/ZnO Heterostructure
Cd x Te y O z/CdS/por-ZnO/ZnO heterostructures were synthesized using a combination of
electrochemical etching followed by the ion layer adsorption and reaction method (SILAR) …
electrochemical etching followed by the ion layer adsorption and reaction method (SILAR) …
Training of the Future Nanoscale Engineers: Methods for Selecting Efficient Solutions in the Nanostructures Synthesis
The article examines modern approaches to training future nanoscale engineers, in
particular the method of analyzing hierarchies for selecting efficient solutions to problems …
particular the method of analyzing hierarchies for selecting efficient solutions to problems …
Synthesis and Characterization of β-Ga2O3/por-GaAs/mono-GaAs Heterostructures for Enhanced Portable Solar Cells
This study comprehensively details the successful synthesis of a β-Ga 2 O 3/por-GaAs/mono-
GaAs heterostructure designed for portable solar cells. Employing a combination of …
GaAs heterostructure designed for portable solar cells. Employing a combination of …