The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

The growth and properties of electronic oxide thin films are reviewed. In particular, the
synthesis and properties of superconducting, insulating, conducting, magnetic, and …

(56) References Cited A method for growing films for use in integrated circuits using atomic
layer deposition and a subsequent converting US PATENT DOCUMENTS step is described …

The present inventors devised unique atomic-layer deposi tion systems, methods, and
apparatus Suitable for aluminum oxide deposition. One exemplary method entails providing …

Effects of post‐deposition annealing temperature (400° C, 600° C, 800° C and 1000° C)
onto metal‐organic decomposed cerium oxide (CeO2) precursor spin‐coated on n‐type Si …

The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf, N)
and hafnium oxide (H? O) and a method of fabricating Such a combination gate and …

(56) References Cited oxide thickness thinner than attainable using SiO. Forming a layer of
hafnium oxide by chemical vapor deposition and US PATENT DOCUMENTS forming a layer …

(57) ABSTRACT A ruthenium gate for a lanthanide oxide dielectric layer and a method of
fabricating such a combination gate and dielec tric layer produce a reliable structure for use …

440 elements such as Zirconium are thermodynamically stable such that the gate oxides
formed Will have minimal reactions With a silicon substrate or other structures during any …

The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium oxide (H? O)
doped with dysprosium (Dy) and a method of fabricating Such a combination gate and …