Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

The last two decades of progress in the theory of crystal surfaces in and out of equilibrium is
reviewed. Various instabilities that occur during growth and sublimation, or that are caused …

Crystal growth far from thermodynamic equilibrium is nothing but homoepitaxy-thin film
growth on a crystalline substrate of the same material. Because of the absence of misfit …

Single-atom catalysts represent an essential and ever-growing family of heterogeneous
catalysts. Recent studies indicate that besides the valuable catalytic properties provided by …

GaP/Si heterostructures were grown by metal-organic chemical vapor deposition in which
the formation of all heterovalent nucleation-related defects (antiphase domains, stacking …

Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …

The realization of the surface code for topological error correction is an essential step
towards a universal quantum computer,–. For single-atom qubits in silicon,,–, the need to …

Valley-orbit coupling is a key parameter for a silicon quantum dot in determining its
suitability for applications in quantum information processing. In this paper we study the …

Self-assembled Ge islands were grown on stripe-patterned Si (001) substrates by solid
source molecular beam epitaxy. The surface morphology obtained by atomic force …

This work provides a ground for a quantitative interpretation of experiments on step
bunching during sublimation of crystals with a pronounced Ehrlich-Schwoebel (ES) barrier …