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The Longevity of Neural Interfaces—Mechanical Oscillation of Thin Film Metal‐Based Neural Electrodes Determine Stability During Electrical Stimulation
The success of bioelectronics medicine with neural implants inevitably depends on the
longevity of neural interfaces where a full understanding of the associated risks serves as …
longevity of neural interfaces where a full understanding of the associated risks serves as …
Resonant anti-reflection metasurfaces for infrared transmission optics
A fundamental capability needed for any transmissive optical component is anti-reflection,
yet this capability can be challenging to achieve in a cost-effective manner over longer …
yet this capability can be challenging to achieve in a cost-effective manner over longer …
Ultrathin Ge-YF3 antireflective coating with 0.5 % reflectivity on high-index substrate for long-wavelength infrared cameras
Achieving long-wavelength infrared (LWIR) cameras with high sensitivity and shorter
exposure times faces challenges due to series reflections from high-refractive index lenses …
exposure times faces challenges due to series reflections from high-refractive index lenses …
Effect of film stress on different electrical properties of PECVD grown SiNx films and its bilayer structures: A study of Si surface passivation strategy
The prevalence of stress during thin film deposition has a substantial influence on the
surface passivation of CMOS image sensors (CIS). Our present research thoroughly …
surface passivation of CMOS image sensors (CIS). Our present research thoroughly …
[HTML][HTML] Adhesion strength of ductile thin film determined by cross-sectional nanoindentation
D Zhao, S Letz, M Jank, M März - International Journal of Mechanical …, 2024 - Elsevier
Cross-sectional nanoindentation (CSN) is a powerful tool for measuring the adhesion
strength of thin films. However, a quantitative assessment of interfacial properties for metal …
strength of thin films. However, a quantitative assessment of interfacial properties for metal …
A cohesive-zone-based contact mechanics analysis of delamination in homogeneous and layered half-spaces subjected to normal and shear surface tractions
J Cen, K Komvopoulos - Journal of Applied …, 2023 - asmedigitalcollection.asme.org
A contact mechanics analysis of interfacial delamination in elastic and elastic-plastic
homogeneous and layered half-spaces due to normal and shear surface tractions induced …
homogeneous and layered half-spaces due to normal and shear surface tractions induced …
Scalable MXene/Sepiolite film-based hydrovoltaic generators with outstanding output power
W Yuan, H Liu, Y Fu, Y Zhang, H Huo, L Zhang… - Chemical Engineering …, 2024 - Elsevier
Harvesting energy from the ambient environment via hydrovoltaic effect is an emerging
technology for environmentally friendly and sustainable power generation. However, its …
technology for environmentally friendly and sustainable power generation. However, its …
On the mechanical properties of ultrathin titanium nitride films under different gas ratios of PVD process
YZ Lai, W Fang - Microelectronic Engineering, 2025 - Elsevier
Abstract Titanium Nitride (TiN x) thin film has numerous applications in semiconductors,
nanotechnology, and various aspects of daily life. This study presents an approach to …
nanotechnology, and various aspects of daily life. This study presents an approach to …
Enhancing Antireflection Based on a Symmetry-Dependent Kerker Effect
IH Song, YG Ki, SJ Kim, BJ Jeon, JS Yoon, SJ Kim - Nano Letters, 2024 - ACS Publications
The significance of antireflection has persisted over time due to its numerous optical
applications. To achieve broadband antireflection, multiple element-based designs using …
applications. To achieve broadband antireflection, multiple element-based designs using …
Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers
Gallium nitride (GaN) heteroepitaxial growth is widely studied as a semiconductor material
due to its various benefits. Especially, development of a buffer layer between GaN and the …
due to its various benefits. Especially, development of a buffer layer between GaN and the …