Dopants and defects in ultra-wide bandgap semiconductors
Ultra-wide bandgap semiconductors, with bandgaps greater than 3.5 eV, have immense
potential in power-switching electronic applications and ultraviolet light emitters. But the …
potential in power-switching electronic applications and ultraviolet light emitters. But the …
Trap-assisted Auger-Meitner recombination from first principles
Trap-assisted nonradiative recombination is known to limit the efficiency of optoelectronic
devices, but the conventional multiphonon emission (MPE) process fails to explain the …
devices, but the conventional multiphonon emission (MPE) process fails to explain the …
Theoretical characterization and computational discovery of ultra-wide-band-gap semiconductors with predictive atomistic calculations
First-principles calculations based on density-functional theory have become an established
theoretical characterization toolkit to understand and predict the structural and functional …
theoretical characterization toolkit to understand and predict the structural and functional …
Carbon complexes in highly C-doped GaN
We investigate the properties of heavily C-doped GaN grown by hydride vapor phase
epitaxy using both optical experiments and hybrid density functional theory calculations …
epitaxy using both optical experiments and hybrid density functional theory calculations …
Photoluminescence related to Ca in GaN
The Ca Ga acceptor in GaN was studied using photoluminescence (PL) experiments and
first-principles calculations. The experimentally found–/0 transition level of the Ca Ga at …
first-principles calculations. The experimentally found–/0 transition level of the Ca Ga at …
Defects and oxygen impurities in ferroelectric wurtzite Al1− xScxN alloys
III-nitrides and related alloys are widely used for optoelectronics and as acoustic resonators.
Ferroelectric wurtzite nitrides are of particular interest because of their potential for direct …
Ferroelectric wurtzite nitrides are of particular interest because of their potential for direct …
Antireflective GaN nanoridge texturing by metal-assisted chemical etching via a thermally dewetted Pt catalyst network for highly responsive ultraviolet photodiodes
Antireflective (AR) surface texturing is a feasible way to boost the light absorption of
photosensitive materials and devices. As a plasma-free etching method, metal-assisted …
photosensitive materials and devices. As a plasma-free etching method, metal-assisted …
Tracking of point defects in the full compositional range of AlGaN via photoluminescence spectroscopy
A comprehensive energy map as a function of AlGaN composition over the whole alloy
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …
To define nonradiative defects in semiconductors: An accurate DLTS simulation based on first-principle
Deep level transient spectroscopy (DLTS) is a crucial technique to characterize the defects
in semiconductor devices. Within the framework of the state-of-the-art density functional …
in semiconductor devices. Within the framework of the state-of-the-art density functional …
Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of acceptors in GaN
The Heyd-Scuseria-Ernzerhof (HSE) hybrid functional has become a widely used tool for
theoretical calculations of point defects in semiconductors. It generally offers a satisfactory …
theoretical calculations of point defects in semiconductors. It generally offers a satisfactory …