This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

Experimental and theoretical progress toward quantum computation with spins in quantum
dots (QDs) is reviewed, with particular focus on QDs formed in GaAs heterostructures, on …

Abstract Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction
band valleys, which compete with the spin degree of freedom in the formation of qubits …

Silicon spin qubits stand out due to their very long coherence times, compatibility with
industrial fabrication, and prospect to integrate classical control electronics. To achieve a …

The electrical characterisation of classical and quantum devices is a critical step in the
development cycle of heterogeneous material stacks for semiconductor spin qubits. In the …

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or
tunable energy splittings of the valley states associated with degenerate conduction band …

The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a
silicon double-quantum dot with an integrated micromagnet in which the qubit basis states …

We propose a quantum dot qubit architecture that has an attractive combination of speed
and fabrication simplicity. It consists of a double quantum dot with one electron in one dot …

Silicon/silicon-germanium heterostructures have many important advantages for hosting
spin qubits. However, controlling the valley splitting (the energy splitting between the two …

Abstract In Si/SiGe heterostructures, the low-lying excited valley state seriously limits the
operability and scalability of electron spin qubits. For characterizing and understanding the …