Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Recent developments and prospects of fully recessed MIS gate structures for GaN on Si power transistors
For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …
Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
Vertical GaN and Vertical Ga2O3 Power Transistors: Status and Challenges
Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide
(SiC) are rapidly making inroads into the power semiconductor markets dominated by the …
(SiC) are rapidly making inroads into the power semiconductor markets dominated by the …
702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation
High-performance-Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect
transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to …
transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to …
Challenges and perspectives for vertical GaN-on-Si trench MOS reliability: From leakage current analysis to gate stack optimization
The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field
effect transistor (MOSFET) is a promising architecture for the development of efficient GaN …
effect transistor (MOSFET) is a promising architecture for the development of efficient GaN …
Trench gate β-Ga2O3 MOSFETs: A review
Abstract Gallium oxide (Ga 2 O 3) has emerged as a promising candidate for ultra-wide
bandgap semiconductors for power devices due to its high breakdown field, large Baliga's …
bandgap semiconductors for power devices due to its high breakdown field, large Baliga's …
Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment
The electrical properties of vertical GaN trench MOSFETs without drift layers were evaluated
to investigate the effect of nitrogen plasma treatment on the trench sidewalls. It is …
to investigate the effect of nitrogen plasma treatment on the trench sidewalls. It is …
Study of drain-induced channel effects in vertical GaN junction field-effect transistors
A normally-off vertical gallium nitride (GaN) junction field-effect transistor (JFET) is
demonstrated in this work. The device shows an on/off current ratio of 3.6× 10 10, a …
demonstrated in this work. The device shows an on/off current ratio of 3.6× 10 10, a …
On the conduction properties of vertical GaN n-channel trench MISFETs
ON-state conductance properties of vertical GaN n-channel trench MISFETs manufactured
on different GaN substrates and having different gate trench orientations are studied up to …
on different GaN substrates and having different gate trench orientations are studied up to …
On the Baliga's figure-of-merits (BFOM) enhancement of a novel GaN nano-pillar vertical field effect transistor (FET) with 2DEG channel and patterned substrate
A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing
the on-state resistance (R ON) and substrate pattern (SP) for enhancing the breakdown …
the on-state resistance (R ON) and substrate pattern (SP) for enhancing the breakdown …