Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization

XB Li, NK Chen, XP Wang… - Advanced Functional …, 2018 - Wiley Online Library
To meet the requirement of big data era and neuromorphic computations, nonvolatile
memory with fast speed, high density, and low power consumption is urgently needed. As an …

The Design and Application on Interfacial Phase‐Change Memory

J Tominaga - physica status solidi (RRL)–Rapid Research …, 2019 - Wiley Online Library
Intel and Micron Technology successfully shipped phase‐change memory (PCM) to the
market in 2017, as Storage Class Memory (SCM). The switching mechanism of PCM relies …

Interface formation of two-and three-dimensionally bonded materials in the case of GeTe–Sb 2 Te 3 superlattices

J Momand, R Wang, JE Boschker, MA Verheijen… - Nanoscale, 2015 - pubs.rsc.org
GeTe–Sb2Te3 superlattices are nanostructured phase-change materials which are under
intense investigation for non-volatile memory applications. They show superior properties …

Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb 2 Te 3 Superlattices

J Tominaga, AV Kolobov, P Fons, T Nakano… - Advanced Materials …, 2014 - elibrary.ru
A superlattice made of a topological insulator (Sb2Te3) and a normal insulator (ferroelectric
GeTe), also called an interfacial phase‐change material, are switched between the Dirac …

Metastability and Phase Change Phenomena

AV Kolobov, J Tominaga - Chalcogenides; Springer: Berlin/Heidelberg …, 2012 - Springer
A state-of-the-art description of metastability observed in chalcogenide alloys is presented
with the accent on the underlying physics. A comparison is made between sulphur …

Temperature dependent evolution of local structure in chalcogenide-based superlattices

A Lotnyk, I Hilmi, M Behrens, B Rauschenbach - Applied Surface Science, 2021 - Elsevier
Interfacial phase change memory utilizing chalcogenide-based superlattices (CSLs) offers
outstanding device performance and is an emerging contender to replace conventional …

Topological Insulating in Phase-Change Superlattice

B Sa, J Zhou, Z Sun, J Tominaga, R Ahuja - Physical review letters, 2012 - APS
GeTe/Sb 2 Te 3 superlattice phase-change memory devices demonstrated greatly improved
performance over that of Ge 2 Sb 2 Te 5, a prototype record media for phase-change …

Atomic Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb2Te3 Superlattices

AV Kolobov, P Fons, Y Saito, J Tominaga - ACS omega, 2017 - ACS Publications
Nonvolatile memory, of which phase-change memory (PCM) is a leading technology, is
currently a key element of various electronics and portable systems. An important step in the …

[HTML][HTML] Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices

J Tominaga, AV Kolobov, PJ Fons, X Wang… - … and technology of …, 2015 - Taylor & Francis
Multiferroics, materials in which both magnetic and electric fields can induce each other,
resulting in a magnetoelectric response, have been attracting increasing attention, although …

The development of two dimensional group IV chalcogenides, blocks for van der Waals heterostructures

B Sa, Z Sun, B Wu - Nanoscale, 2016 - pubs.rsc.org
In this work, we introduce a series of two dimensional (2D) group IV chalcogenides (AX) 2
with the building block X–A–A–X (A= Si, Ge, Sn, and Pb, and X= Se and Te) on the basis of …