Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …

Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …

Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …

Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …

We present a deep-ultraviolet semiconductor laser diode that operates under current
injection at room temperature and at a very short wavelength. The laser structure was grown …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

The investigation of electrical and optical properties of micro-scale AlGaN deep ultraviolet
(DUV) light-emitting diodes (LEDs) emitting at∼ 275nm was carried out, with an emphasis …