High stress nitride film and method for formation thereof
YM Wan, R De Blank, JW Maes - US Patent 7,629,267, 2009 - Google Patents
US PATENT DOCUMENTS 2002/0047151 A1 4/2002 Kim et al. 2002fO073925 A1 6, 2002
Noble et al. 4,851,095 A 7/1989 Scobey et al. 2002/0098.627 A1 7/2002 Pomarede et al …
Noble et al. 4,851,095 A 7/1989 Scobey et al. 2002/0098.627 A1 7/2002 Pomarede et al …
Deposition of complex nitride films
SP Haukka, T Claasen, P Zagwijn - US Patent 7,691,757, 2010 - Google Patents
Methods are provided for pulsed chemical vapor deposition (CVD) of complex nitrides, such
as ternary metal nitrides. Pulses of metal halide precursors are separated from one another …
as ternary metal nitrides. Pulses of metal halide precursors are separated from one another …
Process for deposition of semiconductor films
MA Todd, M Hawkins - US Patent 6,821,825, 2004 - Google Patents
Chemical vapor deposition processes utilize chemical pre cursors that allow for the
deposition of thin films to be conducted at or near the mass transport limited regime. The …
deposition of thin films to be conducted at or near the mass transport limited regime. The …
Low temperature silicon compound deposition
R Haverkort, YM Wan, MJ De Blank… - US Patent …, 2007 - Google Patents
(57) Sequential processes are conducted in a batch reaction chamber to form ultra high
quality silicon-containing com pound layers, eg, silicon nitride layers, at low temperatures …
quality silicon-containing com pound layers, eg, silicon nitride layers, at low temperatures …
Deposition over mixed substrates
MA Todd - US Patent 6,900,115, 2005 - Google Patents
Chemical vapor deposition methods are used to deposit Silicon-containing films over mixed
Substrates. Such meth ods are useful in Semiconductor manufacturing to provide a variety of …
Substrates. Such meth ods are useful in Semiconductor manufacturing to provide a variety of …
Phase-field approach to heterogeneous nucleation
M Castro - Physical Review B, 2003 - APS
We consider the problem of heterogeneous nucleation and growth. The system is described
by a phase-field model in which the temperature is included through thermal noise. We …
by a phase-field model in which the temperature is included through thermal noise. We …
Thin films and method of making them
MA Todd, I Raaijmakers - US Patent 6,962,859, 2005 - Google Patents
Related US Application Data (60) Provisional application No. 60/768,337, filed on Feb. 12,
2001, provisional application No. 60/279.256, filed on Mar. 27, 2001, provisional application …
2001, provisional application No. 60/279.256, filed on Mar. 27, 2001, provisional application …
Process for deposition of semiconductor films
MA Todd - US Patent 6,958,253, 2005 - Google Patents
(60) Provisional application No. 60/340,454, filed on Dec. 7, 2001, provisional application
No. 60/333,724, filed on Nov.(Continued) 28, 2001, provisional application No. 60/332,696 …
No. 60/333,724, filed on Nov.(Continued) 28, 2001, provisional application No. 60/332,696 …
Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase …
J Olivares, P Martın, A Rodrıguez, J Sangrador… - Thin Solid Films, 2000 - Elsevier
Amorphous Si1− xGex layers with Ge fractions up to x= 0.38 were deposited by low pressure
chemical vapor deposition. Polycrystalline layers were obtained by solid-phase …
chemical vapor deposition. Polycrystalline layers were obtained by solid-phase …
Ni-imprint induced solid-phase crystallization in Si1− xGex (x: 0–1) on insulator
K Toko, H Kanno, A Kenjo, T Sadoh, T Asano… - Applied Physics …, 2007 - pubs.aip.org
Position control of solid-phase crystallization in the amorphous Si 1− x Ge x ( x: 0–1) films
on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation …
on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation …