2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities
Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
Artificial neural network-based compact modeling methodology for advanced transistors
The artificial neural network (ANN)-based compact modeling methodology is evaluated in
the context of advanced field-effect transistor (FET) modeling for Design-Technology …
the context of advanced field-effect transistor (FET) modeling for Design-Technology …
Performance assessment of a novel vertical dielectrically modulated TFET-based biosensor
A vertical dielectrically modulated tunnel field-effect transistor (V-DMTFET) as a label-free
biosensor has been investigated in this paper for the first time and compared with lateral …
biosensor has been investigated in this paper for the first time and compared with lateral …
Investigation of a Ge-source vertical TFET with delta-doped layer
In this article, a δ-doped germanium-source vertical TFET (Ge-source vTFET) is proposed
and investigated by Synopsis TCAD simulation. Higher ON-state current is obtained as the …
and investigated by Synopsis TCAD simulation. Higher ON-state current is obtained as the …
A review of tunnel field-effect transistors for improved ON-state behaviour
Tunnel Field-effect transistor (TFET) is regarded as the most promising candidate which can
possibly replace the traditional MOSFET from current IC technology. It has gained much …
possibly replace the traditional MOSFET from current IC technology. It has gained much …
Negative capacitance FinFET with sub-20-mV/decade subthreshold slope and minimal hysteresis of 0.48 V
In this letter, an n-type short-channel negative capacitance FinFET (NC-FinFET) with a
hysteresis window of 0.48 V, an on-/off-current ratio of 10 7, and a sub-20-mV/decade …
hysteresis window of 0.48 V, an on-/off-current ratio of 10 7, and a sub-20-mV/decade …
Design and Performance Analysis of Tunnel Field Effect Transistor With Buried Strained Si1−xGex Source Structure Based Biosensor for Sensitivity Enhancement
In this paper, a dielectrically modulated symmetrical double gate, having dual gate material,
Tunnel Field-Effect transistor with Buried strained Si 1-x Ge x source structure, has been …
Tunnel Field-Effect transistor with Buried strained Si 1-x Ge x source structure, has been …
Design and analysis of double-gate junctionless vertical TFET for gas sensing applications
In this present study, junctionless vertical tunnel field-effect transistor (JL-VTFET) with
catalytic metals as gate contacts is proposed for gas sensing applications. The vertical …
catalytic metals as gate contacts is proposed for gas sensing applications. The vertical …
Suppression of ambipolar current in tunnel FETs using drain-pocket: Proposal and analysis
In this paper, we investigate the impact of a drain-pocket (DP) adjacent to the drain region in
Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using …
Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using …