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The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Structural, elastic, electronic, optical and anisotropy properties of newly quaternary Tl2HgGeSe4 via DFPT predictions associated to XPES and RS experiments
In the present work, we report on theoretical studies of thermodynamic properties, structural
and dynamic stabilities, dependence of unit-cell parameters and elastic constants upon …
and dynamic stabilities, dependence of unit-cell parameters and elastic constants upon …
Study of Cs adsorption on (100) surface of [001]-oriented GaN nanowires: A first principle research
S **a, L Liu, Y Kong, H Wang, M Wang - Applied Surface Science, 2016 - Elsevier
Based on first-principle study, the adsorption mechanism of Cs on (100) crystal plane of GaN
nanowire surface with coverage of 1/12 monolayer is explored. It is discovered that the most …
nanowire surface with coverage of 1/12 monolayer is explored. It is discovered that the most …
Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model
G Thomas, RA Ferreyra, MA Quiroga - Applied Surface Science, 2024 - Elsevier
Germanium, gallium, nitrogen, and oxygen deposition on both GaN (0001) and GaN (000 1
̄) surfaces were investigated. A multiscale simulation framework was implemented. The …
̄) surfaces were investigated. A multiscale simulation framework was implemented. The …
[HTML][HTML] Electron band bending of polar, semipolar and non-polar GaN surfaces
I Bartoš, O Romanyuk, J Houdkova… - Journal of Applied …, 2016 - pubs.aip.org
The magnitudes of the surface band bending have been determined by X-ray photoelectron
spectroscopy for polar, semipolar, and non-polar surfaces of wurtzite GaN crystals. All …
spectroscopy for polar, semipolar, and non-polar surfaces of wurtzite GaN crystals. All …
Magnetron sputtering preparation of flexible ZnO/AlN thin-films sensors with hybrid piezoelectric effect for broad-range human motions detection
Y Xue, Z Weng, Q **ang, N Liao, W Xue - Ceramics International, 2024 - Elsevier
Wearable sensors with excellent comfort, flexibility and fast response are widely applied in
human-machine interactions, artificial skin, motion detection and healthcare monitoring …
human-machine interactions, artificial skin, motion detection and healthcare monitoring …
A first-principles calculations investigate the superlubricity and adhesion performance of structural superlubricity micro-components on polydimethylsiloxane surface
J Lin, C Zhang, N Liao, M Zhang, L Chen - Materials Today …, 2024 - Elsevier
Adhesion and friction are crucial considerations in the design of microelectromechanical
systems because they can directly influence the energy, dissipation and wear of the system …
systems because they can directly influence the energy, dissipation and wear of the system …
The electronic and optical properties of Cs adsorbed GaAs nanowires via first-principles study
Y Diao, L Liu, S **a, S Feng, F Lu - Physica E: Low-dimensional Systems …, 2018 - Elsevier
In this study, we investigate the Cs adsorption mechanism on (110) surface of zinc-blende
GaAs nanowire. The adsorption energy, work function, dipole moment, geometric structure …
GaAs nanowire. The adsorption energy, work function, dipole moment, geometric structure …
Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si (111)
R Volkov, NI Borgardt, OV Konovalov… - Nanoscale …, 2022 - pubs.rsc.org
We study the cross-sectional shape of GaN nanowires (NWs) by transmission electron
microscopy. The shape is examined at different heights of long NWs, as well as at the same …
microscopy. The shape is examined at different heights of long NWs, as well as at the same …
Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures
M Date, S Mukherjee, J Ghosh, D Saha… - Japanese Journal of …, 2019 - iopscience.iop.org
We have addressed the existing ambiguity regarding the effect of tensile strain in the
underlying GaN layer on Al x Ga 1− x N/GaN heterostructure properties. The bandgaps and …
underlying GaN layer on Al x Ga 1− x N/GaN heterostructure properties. The bandgaps and …