The fundamental surface science of wurtzite gallium nitride

VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …

Study of Cs adsorption on (100) surface of [001]-oriented GaN nanowires: A first principle research

S **a, L Liu, Y Kong, H Wang, M Wang - Applied Surface Science, 2016 - Elsevier
Based on first-principle study, the adsorption mechanism of Cs on (100) crystal plane of GaN
nanowire surface with coverage of 1/12 monolayer is explored. It is discovered that the most …

Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model

G Thomas, RA Ferreyra, MA Quiroga - Applied Surface Science, 2024 - Elsevier
Germanium, gallium, nitrogen, and oxygen deposition on both GaN (0001) and GaN (000 1
̄) surfaces were investigated. A multiscale simulation framework was implemented. The …

[HTML][HTML] Electron band bending of polar, semipolar and non-polar GaN surfaces

I Bartoš, O Romanyuk, J Houdkova… - Journal of Applied …, 2016 - pubs.aip.org
The magnitudes of the surface band bending have been determined by X-ray photoelectron
spectroscopy for polar, semipolar, and non-polar surfaces of wurtzite GaN crystals. All …

Magnetron sputtering preparation of flexible ZnO/AlN thin-films sensors with hybrid piezoelectric effect for broad-range human motions detection

Y Xue, Z Weng, Q **ang, N Liao, W Xue - Ceramics International, 2024 - Elsevier
Wearable sensors with excellent comfort, flexibility and fast response are widely applied in
human-machine interactions, artificial skin, motion detection and healthcare monitoring …

A first-principles calculations investigate the superlubricity and adhesion performance of structural superlubricity micro-components on polydimethylsiloxane surface

J Lin, C Zhang, N Liao, M Zhang, L Chen - Materials Today …, 2024 - Elsevier
Adhesion and friction are crucial considerations in the design of microelectromechanical
systems because they can directly influence the energy, dissipation and wear of the system …

The electronic and optical properties of Cs adsorbed GaAs nanowires via first-principles study

Y Diao, L Liu, S **a, S Feng, F Lu - Physica E: Low-dimensional Systems …, 2018 - Elsevier
In this study, we investigate the Cs adsorption mechanism on (110) surface of zinc-blende
GaAs nanowire. The adsorption energy, work function, dipole moment, geometric structure …

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si (111)

R Volkov, NI Borgardt, OV Konovalov… - Nanoscale …, 2022 - pubs.rsc.org
We study the cross-sectional shape of GaN nanowires (NWs) by transmission electron
microscopy. The shape is examined at different heights of long NWs, as well as at the same …

Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures

M Date, S Mukherjee, J Ghosh, D Saha… - Japanese Journal of …, 2019 - iopscience.iop.org
We have addressed the existing ambiguity regarding the effect of tensile strain in the
underlying GaN layer on Al x Ga 1− x N/GaN heterostructure properties. The bandgaps and …