Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of acceptors in GaN
The Heyd-Scuseria-Ernzerhof (HSE) hybrid functional has become a widely used tool for
theoretical calculations of point defects in semiconductors. It generally offers a satisfactory …
theoretical calculations of point defects in semiconductors. It generally offers a satisfactory …
Identity of the shallowest acceptor in GaN
The Be-related ultraviolet luminescence band with a maximum at about 3.38 eV in GaN: Be
is caused by the shallowest acceptor in GaN with the−/0 transition level at 0.113 eV above …
is caused by the shallowest acceptor in GaN with the−/0 transition level at 0.113 eV above …
[HTML][HTML] Nitrogen vacancy–acceptor complexes in gallium nitride
We used photoluminescence (PL) spectroscopy and first-principles calculations to
investigate GaN doped with Mg, Be, and implanted with Ca. The PL spectra revealed distinct …
investigate GaN doped with Mg, Be, and implanted with Ca. The PL spectra revealed distinct …
Defects in semiconductors
Defects are crucial to understanding semiconductor materials and designing semiconductor-
based devices. In using the term “defects,” we include not only native point defects (such as …
based devices. In using the term “defects,” we include not only native point defects (such as …