Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Ion migration as well as electron transfer and coupling in resistive switching materials
endow memristors with a physically tunable conductance to resemble synapses, neurons …

The explosive increase in digital communications in the Big Data and internet of Things era
spurs the development of universal memory that can run at high speed with high-density and …

Memory cells have always been an important element of information technology. With
emerging technologies like big data and cloud computing, the scale and complexity of data …

This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

MXene, a new state-of-the-art two-dimensional (2D) nanomaterial, has attracted
considerable interest from both industry and academia because of its excellent electrical …

The CH3 NH3 PbI3-x Clx organic-inorganic hybrid perovskite material demonstrates
remarkable resistive switching behavior, which can be applicable in resistive random access …

With the rapid development of data‐driven human interaction, advanced data‐storage
technologies with lower power consumption, larger storage capacity, faster switching speed …

Neuromorphic architectures are in the spotlight as promising candidates for substituting
current computing systems owing to their high operation speed, scale‐down ability, and …

Volatile threshold switching (TS) and non‐volatile memory switching (MS) are two typical
resistive switching (RS) phenomena in oxides, which could form the basis for memory …