As a much-enriched supplement to the previous review paper entitled the “Effective work
functions for ionic and electronic emissions from mono-and polycrystalline surfaces”[Prog …

Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for
next generation information storage, leading to great performance and fabrication-friendly …

Atomic layer deposition (ALD) of smooth and highly conformal films of hafnium and
zirconium oxides was studied using six metal alkylamide precursors for hafnium and …

In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …

The dependence of the metal gate work function on the underlying gate dielectric in
advanced metal-oxide-semiconductor (MOS) gate stacks was explored. Metal work functions …

An overview of our recent work on ultrathin (< 100 Å) films of metal oxides deposited on
silicon for advanced gate dielectrics applications will be presented. Data on ultrathin Al2O3 …

A first-principles study of native point defects in hafnia (Hf O 2) and zirconia (Zr O 2) is
carried out to identify dominant defects under different oxygen chemical potentials and Fermi …

A novel N-doped ZrO 2 (N–ZrO 2) photocatalyst is synthesized through thermal
decomposition of zirconium hydroxide-urea complex and is characterized using various …

Abstracts High-k metal oxide films are vital for the future development of microelectronics
technology. In this work, ZrO 2 films were grown on silicon by atomic layer deposition (ALD) …

Nanocomposites have a wide range of applications, including optical integrated circuits,
sensors, coatings, and medical devices. As a result, the purpose of this paper is to prepare a …