With the booming growth of artificial intelligence (AI), the traditional von Neumann
computing architecture based on complementary metal oxide semiconductor devices are …

Costly data movement in terms of time and energy in traditional von Neumann systems is
exacerbated by emerging information technologies related to artificial intelligence. In …

Memristor-enabled in-memory computing provides an unconventional computing paradigm
to surpass the energy efficiency of von Neumann computers. Owing to the limitation of the …

A self-rectifying ferroelectric tunnel junction that employs a HfO2/ZrO2/HfO2 superlattice
(HZH SL) combined with Al2O3 and TiO2 layers is proposed. The 6 nm-thick HZH SL …

A Fe 2 O 3 film homojunction was orderly prepared by magnetron sputtering and a
hydrothermal method. The Fe 2 O 3 homojunction-based memristor exhibits an obvious self …

Self-rectifying memristor (SRM) with high rectification ratio (RR) and nonlinearity (NL) is a
superior candidate for 3-D integrated array by effectively tackling the sneak path problem. In …

Self-rectifying memristive devices have emerged as promising contenders for low-power in-
memory computing, presenting numerous advantages. However, characterizing the …

High-performance self-rectifying memristor (SRM)-based three-dimensional (3D)
architecture with high integration density is an ideal hardware platform for 3D in-memory …

The volatile and nonvolatile resistance switching (RS) characteristics can be, respectively,
used for the selector and memristor, which have received much attention. Thus, it is …

This study introduces a Ta2O5-based self-rectifying memristor (SRM) with an Al2O3
interfacial layer adopted to improve switching uniformity, read voltage margin, and long-term …