Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

Near-infrared (NIR) solid-state micro/nanolasers are important building blocks for true
integration of optoelectronic circuitry. 1 Although significant progress has been made in III–V …

We review principles and trends in the use of semiconductor nanowires as gain media for
stimulated emission and lasing. Semiconductor nanowires have recently been widely …

All‐inorganic perovskite CsPbX3 (X= Cl, Br, I) and related materials are promising
candidates for potential solar cells, light emitting diodes, and photodetectors. Here, a novel …

We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with
diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase …

Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach,
which is technologically important in optical fiber communication systems, still remain …

We investigate lattice ordering phenomena for the heterovalent ternaries that are based on
the wurtzite lattice, under the constraint that the octet rule be preserved. We show that, with …

III/V semiconductor nanostructures have significant potential in device applications, but
effective surface passivation is critical due to their large surface-to-volume ratio. For InP such …

Negative-thermal-expansion (NTE) materials violate the common knowledge of “thermal
expansion and cold contraction” in solids and embrace various physical mechanisms. In …

Photoelectrochemical (PEC) water splitting into hydrogen and oxygen is a promising
strategy to absorb solar energy and directly convert it into a dense storage medium in the …