Standards for the characterization of endurance in resistive switching devices
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …
applications in multiple types of integrated circuits, including electronic memories, true …
Sprayed FeWO4 thin film-based memristive device with negative differential resistance effect for non-volatile memory and synaptic learning applications
Resistive switching (RS) memories have attracted great attention as promising solutions to
next-generation non-volatile memories and computing technologies because of their simple …
next-generation non-volatile memories and computing technologies because of their simple …
Single molecule-based electronic devices: a review
B Chen, K Xu - Nano, 2019 - World Scientific
In the face of the fact that the development of traditional silicon-based electronic devices is
increasingly limited, single molecule electronic device, which has been attracting more and …
increasingly limited, single molecule electronic device, which has been attracting more and …
Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method
The resistive switching characteristics of TiO 2 nanowire networks directly grown on Ti foil by
a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the …
a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the …
Multilevel programming in Cu/NiOy/NiOx/Pt unipolar resistive switching devices
The application of a NiO y/NiO x bilayer in resistive switching (RS) devices with x> y was
studied for its ability to achieve reliable multilevel cell (MLC) characteristics. A sharp change …
studied for its ability to achieve reliable multilevel cell (MLC) characteristics. A sharp change …
Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure
Post-metal annealing temperature-dependent forming-free resistive switching memory
characteristics, Fowler-Nordheim (FN) tunneling at low resistance state, and after reset using …
characteristics, Fowler-Nordheim (FN) tunneling at low resistance state, and after reset using …
Single carbon nanotubes as ultrasmall all-optical memories
Performance improvements are expected from integration of photonic devices into
information processing systems, and in particular, all-optical memories provide a key …
information processing systems, and in particular, all-optical memories provide a key …
La2NiO4+δ‐Based Memristive Devices Integrated on Si‐Based Substrates
Valence change memories, in which internal redox reactions control the change in
resistance are promising candidates for resistive random access memories (ReRAMs) and …
resistance are promising candidates for resistive random access memories (ReRAMs) and …
Multilevel resistive switching in hydrothermally synthesized FeWO4 thin film-based memristive device for non-volatile memory application
The memristors offer significant advantages as a key element in non-volatile and brain-
inspired neuromorphic systems because of their salient features such as remarkable …
inspired neuromorphic systems because of their salient features such as remarkable …
Effect of swift heavy ion irradiation on the resistive random access memory performance of sputter deposited zinc rich zinc oxide thin films
Abstract Resistive Random-Access Memory (RRAM) devices are synthesized by
sandwiching (i) ZnO thin film and (ii) Zn-rich ZnO thin film between top and bottom …
sandwiching (i) ZnO thin film and (ii) Zn-rich ZnO thin film between top and bottom …